参数资料
型号: MBRB3030CTL
厂商: ON Semiconductor
文件页数: 2/9页
文件大小: 179K
描述: DIODE SCHOTTKY 30V 15A D2PAK
产品变化通告: Product Discontinuation 27/Jun/2007
标准包装: 50
系列: SWITCHMODE™
电压 - 在 If 时为正向 (Vf)(最大): 440mV @ 15A
电流 - 在 Vr 时反向漏电: 2mA @ 30V
电流 - 平均整流 (Io)(每个二极管): 15A
电压 - (Vr)(最大): 30V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 管件
MBRB3030CTLG, NRVBB3030CTLG
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
30
V
Average Rectified Forward Current
(At Rated VR, TC
= 115
?C) Per Device
IO
15
30
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC
= 115
?C)
IFRM
30
A
Non?Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
300
A
Peak Repetitive Reverse Surge Current (1.0 s, 1.0 kHz)
IRRM
2.0
A
Storage Temperature Range
Tstg
?55 to +150
?C
Operating Junction Temperature Range
TJ
?55 to +125
?C
Voltage Rate of Change
(Rated VR, TJ
= 25
?C)
dV/dt
10,000
V/s
Reverse Energy, Unclamped Inductive Surge (TJ
= 25
?C, L = 3.0 mH)
EAS
224.5
mJ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (All device data is “Per Leg” except where noted.)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction?to?Ambient (Note 1)
RJA
50
?C/W
Thermal Resistance, Junction?to?Case
RJC
1.0
?C/W
1. Mounted using minimum recommended pad size on FR?4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF
= 15 A, T
J
= 25
?C)
(IF
= 30 A, T
J
= 25
?C)
VF
0.44
0.51
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated VR, TJ
= 25
?C)
(Rated VR, TJ
= 125
?C)
IR
2.0
195
mA
2. Pulse Test: Pulse Width = 250 s, Duty Cycle ?
2.0%.
相关PDF资料
PDF描述
T95D157K016EZSS CAP TANT 150UF 16V 10% 2917
RH-2409D/HP CONV DC/DC 1W 24VIN +/-09VOUT
AT24C256-10PU-1.8 IC EEPROM 256KBIT 400KHZ 8DIP
1SMA5928BT3G DIODE ZENER 13V 1.5W SMA
GCM12DCAN CONN EDGECARD 24POS R/A .156 SLD
相关代理商/技术参数
参数描述
MBRB3030CTLG 功能描述:肖特基二极管与整流器 30A 30V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBRB3030CTLP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A
MBRB3030CTLPBF 制造商:Vishay Angstrohm 功能描述:Diode Schottky 30V 30A 3-Pin(2+Tab) D2PAK Tube 制造商:Vishay Semiconductors 功能描述:Schottky Rectifier
MBRB3030CTLPBF_10 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A
MBRB3030CTLTRL 功能描述:肖特基二极管与整流器 30 Amp 30 Volt Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel