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参数资料
| 型号： | MBRB3030CTL |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/9页 |
| 文件大小： | 179K |
| 描述： | DIODE SCHOTTKY 30V 15A D2PAK |
| 产品变化通告： | Product Discontinuation 27/Jun/2007 |
| 标准包装： | 50 |
| 系列： | SWITCHMODE™ |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 440mV @ 15A |
| 电流 - 在 Vr 时反向漏电： | 2mA @ 30V |
| 电流 - 平均整流 (Io)（每个二极管）： | 15A |
| 电压 - (Vr)（最大）： | 30V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
MBRB3030CTLG, NRVBB3030CTLG
http://onsemi.com
7
Table 1. UIS Test Data
PART
NO.
IP
(A)
BVR
(V)
ENERGY
(mJ)
L (mH)
TIME
(s)
1
46.6
65.2
998.3
1
715
2
41.7
63.4
870.2
1
657
3
46.0
66.0
1038.9
1
697
4
42.7
64.8
904.2
1
659
5
44.9
64.8
997.3
1
693
6
44.1
64.1
865.0
1
687
7
26.5
63.1
1022.6
3
1261
8
26.4
62.8
1024.9
3
1262
9
24.4
62.2
872.0
3
1178
10
27.6
62.9
1091.0
3
1316
11
27.7
63.2
1102.4
3
1314
12
17.9
62.6
1428.6
10
2851
13
18.9
62.1
1547.4
10
3038
14
18.8
60.7
1521.1
10
3092
15
19.0
62.6
1566.2
10
3037
16
74.2
69.1
768.4
0.3
322
17
77.3
69.6
815.4
0.3
333
18
75.2
68.9
791.7
0.3
328
19
77.3
69.6
842.6
0.3
333
20
73.8
69.1
752.4
0.3
321
21
75.6
69.2
823.2
0.3
328
22
74.7
68.6
747.5
0.3
327
23
78.4
70.3
834.0
0.3
335
24
70.5
66.6
678.4
0.3
317
25
78.3
69.4
817.3
0.3
339
The procedure to determine if a rectifier is appropriate,
from a reverse energy standpoint, to be used in the
application circuit is as follows:
a. Obtain “Peak Reverse Current versus Time” curve
from data book.
b. Determine steady state operating voltage (OV) of
circuit.
c. Determine parasitic inductance (L) of circuit section of
interest.
d. Obtain rated breakdown voltage (BVR) of rectifier
from data book.
e. From the following relationships,
V
L
d
dti(t) I
(BVR
OV)
t
L
a “designer” l versus t curve is plotted alongside the
device characteristic plot.
f. The point where the two curves intersect is the current
level where the devices will start to fail. A peak
inductor current below this intersection should be
chosen for safe operating.
As an example, the values were chosen as L = 200 H,
OV = 12 V and BVR = 35 V.
Figure 13 illustrates the example. Note the UIS
characterization curve, the parasitic inductor current curve
and the safe operating region as indicated.
Figure 13. DUT Peak Reverse and Circuit
Parasitic Inductance Current versus Time
TIME (s)
0 0.003 0.0035 0.0040.0005 0.001 0.0015 0.002 0.0025
120
100
80
60
40
20
0
UIS CHARACTERIZATION CURVE
SAFE OPERATING AREA
Ipeak
— TIME RELATIONSHIP
DUE TO CIRCUIT PARASITICS
SUMMARY
Traditionally, power rectifier users have been supplied
with single?data?point reverse?energy characteristics by
the supplier’s device data sheet; however, as has been shown
here and in previous work, the reverse withstand energy can
vary significantly depending on the application. What was
done in this work was to create a characterization scheme by
which the designer can overlay or map their particular
requirements onto the part capability and determine quite
accurately if the chosen device is applicable. This
characterization technique is very robust due to its statistical
approach, and with proper guardbanding (6) can be used to
give worst?case device performance for the entire product
line. A “typical” characteristic curve is probably the most
applicable for designers allowing them to design in their
own margins.
References
1. Borras, R., Aliosi, P., Shumate, D., 1993, “Avalanche
Capability of Today’s Power Semiconductors,
“Proceedings, European Power Electronic
Conference,” 1993, Brighton, England
2. Pshaenich, A., 1985, “Characterizing Overvoltage
Transient Suppressors,” Powerconversion
International, June/July
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRB3030CTLG | 功能描述:肖特基二极管与整流器 30A 30V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB3030CTLP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBRB3030CTLPBF | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 30V 30A 3-Pin(2+Tab) D2PAK Tube 制造商:Vishay Semiconductors 功能描述:Schottky Rectifier |
| MBRB3030CTLPBF_10 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBRB3030CTLTRL | 功能描述:肖特基二极管与整流器 30 Amp 30 Volt Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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