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参数资料
| 型号： | MBRB3030CTL |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/9页 |
| 文件大小： | 179K |
| 描述： | DIODE SCHOTTKY 30V 15A D2PAK |
| 产品变化通告： | Product Discontinuation 27/Jun/2007 |
| 标准包装： | 50 |
| 系列： | SWITCHMODE™ |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 440mV @ 15A |
| 电流 - 在 Vr 时反向漏电： | 2mA @ 30V |
| 电流 - 平均整流 (Io)（每个二极管）： | 15A |
| 电压 - (Vr)（最大）： | 30V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
MBRB3030CTLG, NRVBB3030CTLG
http://onsemi.com
6
Suggested Method of Characterization
Figure 11. Typical Voltage and Current UIS
Waveforms
TIME (s)
INDUCTOR
CURRENT
DUT
REVERSE
VOLTAGE
Utilizing the UIS test circuit in Figure 10, devices are
tested to failure using inductors ranging in value from 0.01
to 159 mH. The reverse voltage and current waveforms are
acquired to determine the exact energy seen by the device
and the inductive current decay time. At least 4 distinct
inductors and 5 to 10 devices per inductor are used to
generate the characteristic current versus time relationship.
This relationship when coupled with the application circuit
conditions, defines the SOA of the device uniquely for this
application.
Example Application
The device used for this example was an MBR3035CT,
which is a 30 A (15 A per side) forward current, 35 V reverse
breakdown voltage rectifier. All parts were tested to
destruction at 25?C. The inductors used for the
characterization were 10, 3.0, 1.0 and 0.3 mH. The data
recorded from the testing were peak reverse current (Ip),
peak reverse breakdown voltage (BVR), maximum
withstand energy, inductance and inductor discharge time
(see Table 1). A plot of the Peak Reverse Current versus
Time at device destruction, as shown in Figure 12, was
generated. The area under the curve is the region of lower
reverse energy or lower stress on the device. This area is
known as the safe operating area or SOA.
Figure 12. Peak Reverse Current versus
Time for DUT
TIME (s)
0 0.003 0.0035 0.0040.0005 0.001 0.0015 0.002 0.0025
120
100
80
60
40
20
0
UIS CHARACTERIZATION CURVE
SAFE OPERATING AREA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRB3030CTLG | 功能描述:肖特基二极管与整流器 30A 30V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRB3030CTLP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBRB3030CTLPBF | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 30V 30A 3-Pin(2+Tab) D2PAK Tube 制造商:Vishay Semiconductors 功能描述:Schottky Rectifier |
| MBRB3030CTLPBF_10 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBRB3030CTLTRL | 功能描述:肖特基二极管与整流器 30 Amp 30 Volt Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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