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参数资料
| 型号： | MBRB30H60CTT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/10页 |
| 文件大小： | 165K |
| 描述： | DIODE SCHOTTKY 60V 15A H D2PAK |
| 标准包装： | 1 |
| 系列： | SWITCHMODE™ |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 620mV @ 15A |
| 电流 - 在 Vr 时反向漏电： | 300µA @ 60V |
| 电流 - 平均整流 (Io)（每个二极管）： | 15A |
| 电压 - (Vr)（最大）： | 60V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 标准包装 |
| 其它名称： | MBRB30H60CTT4GOSDKR |
MBRB30H60CT?1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,
NRVBB30H60CTT4G, MBRJ30H60CTG
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
60
V
Average Rectified Forward Current
(Rated VR) TC
= 159
?C
IF(AV)
15
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz)
IFRM
30
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
260
A
Operating Junction Temperature (Note 1)
TJ
?55 to +175
?C
Storage Temperature
Tstg
55 to +175
?C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
Controlled Avalanche Energy (see test conditions in Figures 11 and 12)
WAVAL
350
mJ
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance
(MBRB30H60CT?1G and MBR30H60CTG)
Junction?to?Case
Junction?to?Ambient
(MBRF30H60CTG and MBRJ30H60CTG)
Junction?to?Case
(MBRB30H60CTT4G and NRVBB30H60CTT4G)
Junction?to?Case
RJC
RJA
RJC
RJC
2.0
70
4.4
1.6
?C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF
= 15 A, T
C
= 25
?C)
(IF
= 15 A, T
C
= 125
?C)
(IF
= 30 A, T
C
= 25
?C)
(IF
= 30 A, T
C
= 125
?C)
vF
0.62
0.56
0.78
0.71
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC
= 25
?C)
(Rated DC Voltage, TC
= 125
?C)
iR
0.3
45
mA
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ?
2.0%.
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相关代理商/技术参数 |
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| MBRB30H90CT/81 | 功能描述:肖特基二极管与整流器 90 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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