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参数资料
| 型号： | MBRF10100CT-HE3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 84K |
| 代理商： | MBRF10100CT-HE3/45 |
Vishay General Semiconductor
MBRF1090CT & MBRF10100CT
Document Number 88681
18-Aug-06
www.vishay.com
1
2
3
ITO-220AB
PIN 2
PIN 1
PIN 3
Dual Common-Cathode High-Voltage Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
supplies,
free-wheeling
diodes,
dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: ITO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
5.0 A x 2
VRRM
90 V, 100 V
IFSM
120 A
VF
0.75 V
Tj max.
150 °C
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRF1090CT
MBRF10100CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TC = 105 °C
Total device
per diode
IF(AV)
10
5.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
120
A
Peak repetitive reverse current per diode at tp = 2 s, 1 kHz
IRRM
0.5
A
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
Isolation voltage
From terminal to heatsink with t = 1 minute
VAC
1500
V
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBRF1090CT
MBRF10100CT
UNIT
Maximum instantaneous forward
voltage per diode (1)
at IF = 5.0 A
TC = 125 °C
TC = 25 °C
VF
0.75
0.85
V
Maximum reverse current per diode
at working peak reverse voltage (1)
TJ = 25 °C
TJ = 100 °C
IR
100
6.0
A
mA
相关PDF资料 |
PDF描述 |
|---|---|
| MBRF1090CT-HE3/45 | 5 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF10150 | 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRF10200CT-G | 10 A, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF10200CT | 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF10100CT | 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRF10100CT-JT | 制造商:Diodes Incorporated 功能描述:DIODE SCHOTTKY 100V 10A ITO-220A |
| MBRF10100CTP | 功能描述:DIODE ARRAY SCHOTTKY 100V ITO220 制造商:smc diode solutions 系列:- 包装:管件 零件状态:有效 二极管配置:1 对共阴极 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:100V 电流 - 平均整流（Io）（每二极管）:- 不同 If 时的电压 - 正向（Vf）:850mV @ 5A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:1mA @ 100V 安装类型:通孔 封装/外壳:TO-220-3 隔离片 供应商器件封装:ITO-220AB 标准包装:50 |
| MBRF10100CTR | 功能描述:DIODE ARRAY SCHOTTKY 100V ITO220 制造商:smc diode solutions 系列:- 包装:管件 零件状态:有效 二极管配置:1 对共阴极 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:100V 电流 - 平均整流（Io）（每二极管）:- 不同 If 时的电压 - 正向（Vf）:850mV @ 5A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:1mA @ 100V 安装类型:通孔 封装/外壳:TO-220-3 隔离片 供应商器件封装:ITO-220AB 标准包装:50 |
| MBRF10100CT-TU | 制造商:LITEON-SEMI 功能描述:10A, 100V, Schottky Diode |
| MBRF10100D | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:10.0AMPS Isolated Schottky Barrier Rectifier |
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