参数资料
型号: MBRF10100CT-HE3/45
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
文件页数: 2/4页
文件大小: 84K
代理商: MBRF10100CT-HE3/45
www.vishay.com
2
Document Number 88681
18-Aug-06
Vishay General Semiconductor
MBRF1090CT & MBRF10100CT
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise specified)
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRF1090CT
MBRF10100CT
UNIT
Typical thermal resistance per diode
RθJC
6.8
°C/W
ORDERING INFORMATION
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ITO-220AB
MBRF10100CT-E3/45
1.99
45
50/Tube
Tube
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
2
4
6
10
0
50
100
150
8
Resistive or Inductive Load
A
v
er
age
F
o
rw
ard
C
u
rrent
(
A)
Case Temperature (°C)
0
20
60
40
100
80
120
1
100
10
TJ = TJ max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
0
0.2
1.0
1.2
1.4
1.6
0.4
100
10
0.1
0.01
1.0
0.6
0.8
TJ = 100 °C
TJ = 150 °C
TJ = 175 °C
TJ = 25 °C
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
0.01
0.001
0.1
1
10
100
0.0001
20
0
100
40
60
80
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 100 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
相关PDF资料
PDF描述
MBRF1090CT-HE3/45 5 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRF10150 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC
MBRF10200CT-G 10 A, SILICON, RECTIFIER DIODE, TO-220AB
MBRF10200CT 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRF10100CT 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
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