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参数资料
| 型号： | MBRF10100D |
| 元件分类： | 整流器 |
| 英文描述： | 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | GREEN, PLASTIC, ITO-220AB, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 160K |
| 代理商： | MBRF10100D |
CREAT BY ART
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High Surge capability
MBRF10XXD
= Specific Device Code
G
= Green compound
Y
= Year
WW
= Work Week
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
Unit
VRRM
V
VRMS
V
VDC
V
IRRM
A
dV/dt
V/uS
RθJC
OC/W
TJ
OC
TSTG
OC
Note2: Thermal Resistance from Junction to Case Per Leg
Guarding for overvoltage protection
Note1: Pulse Test : 300us Pulse Width, 1% Duty cycle
-65 to + 150
IF(AV)
High temperature soldering guaranteed: 260℃/
10 seconds, 0.25"(6.35mm) from case
Dimensions in inches and (millimeters)
Marking Diagram
10
MBRF
10100D
100
Maximum Thermal Resistance Per Leg (Note 2)
Voltage rate of change (Rated VR)
Type Number
Maximum DC blocking voltage
Version:A11
10.0AMPS Isolated Schottky Barrier Rectifier
Operating Temperature Range
Storage Temperature Range
3.5
Peak Repetitive Reverse Surge Current
Maximum Average Forward Rectified Current
@Tc = 133℃(Total Device)
10,000
-65 to + 150
0.5
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
ITO-220AB
Features
Maximum Repetitive Peak Reverse Voltage
Mounting torque: 5 in-lbs. Max.
Mechanical Data
Mounting position: Any
Case: ITO-220AB molded plastic body
Maximum Ratings and Electrical Characteristics
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
Weight: 1.74 grams
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
IFSM
120
A
MBRF10100D - MBRF10200D
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Polarity: As marked
Maximum RMS Voltage
70
100
MBRF
10150D
150
105
150
MBRF
10200D
200
140
200
V
Maximum Reverse Current at Rated DC Blocking Voltage
TA=25 ℃
TA=125 ℃
IR
0.1
5
mA
Maximum Instantaneous Forward Voltage at (Note 1)
IF = 5A, TA=25℃
IF = 5A, TA=125℃
IF = 10A, TA=25℃
IF = 10A, TA=125℃
VF
0.85
0.75
0.95
0.85
0.88
0.78
0.98
0.88
Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE
相关PDF资料 |
PDF描述 |
|---|---|
| MBRF10200D | 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF10100 | 10 A, 100 V, SILICON, RECTIFIER DIODE |
| MBRF10150CT | 10 A, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF10200CT | 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF1030CT | 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBRF10100D C0 | 功能描述:肖特基二极管与整流器 10A 100V SINGLE SCHOTTKY REC ISOLATD RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRF10100-E3 | 制造商:Vishay Semiconductors 功能描述:Schottky Rectifier |
| MBRF10100-E3/45 | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 100V 10A 2-Pin(2+Tab) ITO-220AC Tube |
| MBRF10100-E3/4W | 功能描述:肖特基二极管与整流器 10 Amp 100 Volt 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MBRF10100-E34W | 制造商:KERSEMI 制造商全称:Kersemi Electronic Co., Ltd. 功能描述:Trench MOS Schottky technology |
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