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参数资料
| 型号： | MBT35200MT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
| 中文描述： | 2000 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CASE 318G-02, TSOP-6 |
| 文件页数： | 1/8页 |
| 文件大小： | 81K |
| 代理商： | MBT35200MT1 |
Semiconductor Components Industries, LLC, 2000
August, 2000 – Rev. 1
1
Publication Order Number:
MBT35200MT1/D
MBT35200MT1
High Current Surface
Mount PNP Silicon
Switching Transistor for
Load Management in
Portable Applications
A Device of the X
Family
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
V
CEO
–35
Vdc
Collector-Base Voltage
V
CBO
–55
Vdc
Emitter-Base Voltage
V
EBO
–5.0
Vdc
Collector Current — Continuous
I
C
–2.0
Adc
Collector Current — Peak
I
CM
–5.0
A
Electrostatic Discharge
ESD
HBM Class 3
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 1.)
625
5.0
mW
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
θ
JA
(Note 1.)
200
°
C/W
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 2.)
1.0
8.0
W
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
θ
JA
(Note 2.)
120
°
C/W
Thermal Resistance,
Junction to Lead #1
R
θ
JL
80
°
C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
P
Dsingle
(Notes 2. & 3.)
1.75
W
Junction and Storage
Temperature Range
T
J
, T
stg
–55 to
+150
°
C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 X 1.0 inch Pad
3. ref: Figure 9
Device
Package
Shipping
ORDERING INFORMATION
MBT35200MT1
Case 318G
http://onsemi.com
CASE 318G
TSOP
STYLE 6
3000/Tape & Reel
DEVICE MARKING
4
56
321
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
35 VOLTS
2.0 AMPS
PNP TRANSISTOR
G4 (date code)
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相关代理商/技术参数 |
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| MBT35200MT1_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
| MBT35200MT1G | 功能描述:两极晶体管 - BJT Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MBT35200MT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MBT35200MT2G | 功能描述:两极晶体管 - BJT TSOP6 PNP XSTR SPCL RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MBT3904DW | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Dual General Purpose Transistor NPN+NPN Silicon |
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