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参数资料
| 型号： | MBT35200MT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
| 中文描述： | 2000 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CASE 318G-02, TSOP-6 |
| 文件页数： | 3/8页 |
| 文件大小： | 81K |
| 代理商： | MBT35200MT1 |
MBT35200MT1
http://onsemi.com
3
Figure 1. Collector Emitter Saturation Voltage
versus Collector Current
Figure 2. Collector Emitter Saturation Voltage
versus Collector Current
0.001
I
C
, COLLECTOR CURRENT (AMPS)
0.1
0.01
I
C
, COLLECTOR CURRENT (AMPS)
0.1
1.0
0.001
0.05
0
0.001
0.01
0.1
1.0
0.01
0.10
0.15
I
C
/I
B
= 100
0.20
0.25
100
°
C
25
°
C
-55
°
C
50
10
VC
V
VC
V
I
C
/I
B
= 50
Figure 3. DC Current Gain versus
Collector Current
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
Figure 5. Base Emitter Turn–On Voltage
versus Collector Current
Figure 6. Input Capacitance
0.1
1.0
0.001
I
C
, COLLECTOR CURRENT (AMPS)
1.6
0.4
1.0
0.2
0
I
C
, COLLECTOR CURRENT (AMPS)
0.01
0.001
1.0
0.4
0
0.1
0.001
I
C
, COLLECTOR CURRENT (AMPS)
1.1
0.6
0.5
0.4
0.3
V
EB
, EMITTER BASE VOLTAGE (VOLTS)
0
750
550
500
450
350
300
1.5
0.01
h
VB
0.01
0.1
1.0
,
VB
1.0
0.9
0.5
5.0
1.0
400
Ci
1.2
0.6
0.8
1.4
100
°
C
0.6
0.8
V
700
650
600
25
°
C
-55
°
C
0.2
100
°
C
25
°
C
-55
°
C
0.8
0.7
1.0
100
°
C
25
°
C
-55
°
C
3.0
2.0
2.5
3.5
4.0
4.5
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBT35200MT1_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
| MBT35200MT1G | 功能描述:两极晶体管 - BJT Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MBT35200MT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MBT35200MT2G | 功能描述:两极晶体管 - BJT TSOP6 PNP XSTR SPCL RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MBT3904DW | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Dual General Purpose Transistor NPN+NPN Silicon |
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