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参数资料
| 型号： | MBT35200MT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
| 中文描述： | 2000 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CASE 318G-02, TSOP-6 |
| 文件页数： | 2/8页 |
| 文件大小： | 81K |
| 代理商： | MBT35200MT1 |
MBT35200MT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mAdc, I
B
= 0)
V
(BR)CEO
–35
–45
—
Vdc
Collector–Base Breakdown Voltage
(I
C
= –0.1 mAdc, I
E
= 0)
V
(BR)CBO
–55
–65
—
Vdc
Emitter–Base Breakdown Voltage
(I
E
= –0.1 mAdc, I
C
= 0)
V
(BR)EBO
–5.0
–7.0
—
Vdc
Collector Cutoff Current
(V
CB
= –35 Vdc, I
E
= 0)
I
CBO
—
–0.03
–0.1
Adc
Collector–Emitter Cutoff Current
(V
CES
= –35 Vdc)
I
CES
—
–0.03
–0.1
Adc
Emitter Cutoff Current
(V
EB
= –4.0 Vdc)
I
EBO
—
–0.01
–0.1
Adc
ON CHARACTERISTICS
DC Current Gain
(1)
(I
C
= –1.0 A, V
CE
= –1.5 V)
(I
C
= –1.5 A, V
CE
= –1.5 V)
(I
C
= –2.0 A, V
CE
= –3.0 V)
h
FE
100
100
100
200
200
200
—
400
—
Collector–Emitter Saturation Voltage (Note 4.)
(I
C
= –0.8 A, I
B
= –0.008 A)
(I
C
= –1.2 A, I
B
= –0.012 A)
(I
C
= –2.0 A, I
B
= –0.02 A)
V
CE(sat)
—
—
—
–0.125
–0.175
–0.260
–0.15
–0.20
–0.31
V
Base–Emitter Saturation Voltage (Note 4.)
(I
C
= –1.2 A, I
B
= –0.012 A)
V
BE(sat)
—
–0.68
–0.85
V
Base–Emitter Turn–on Voltage (Note 4.)
(I
C
= –2.0 A, V
CE
= –3.0 V)
V
BE(on)
—
–0.81
–0.875
V
Cutoff Frequency
(I
C
= –100 mA, V
CE
= –5.0 V, f = 100 MHz)
f
T
100
—
—
MHz
Input Capacitance (V
EB
= –0.5 V, f = 1.0 MHz)
Cibo
—
600
650
pF
Output Capacitance (V
CB
= –3.0 V, f = 1.0 MHz)
Cobo
—
85
100
pF
Turn–on Time (V
CC
= –10 V, I
B1
= –100 mA, I
C
= –1 A, R
L
= 3 )
t
on
—
35
—
nS
Turn–off Time (V
CC
= –10 V, I
B1
= I
B2
= –100 mA, I
C
= 1 A, R
L
= 3 )
4. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle
≤
2%
t
off
—
225
—
nS
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相关代理商/技术参数 |
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|---|---|
| MBT35200MT1_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
| MBT35200MT1G | 功能描述:两极晶体管 - BJT Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MBT35200MT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MBT35200MT2G | 功能描述:两极晶体管 - BJT TSOP6 PNP XSTR SPCL RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MBT3904DW | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Dual General Purpose Transistor NPN+NPN Silicon |
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