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参数资料
| 型号： | MC100ES8111ACR2 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 6/12页 |
| 文件大小： | 0K |
| 描述： | IC CLOCK BUFFER MUX 2:10 32-LQFP |
| 标准包装： | 2,000 |
| 系列： | 100ES |
| 类型： | 扇出缓冲器（分配），多路复用器 |
| 电路数： | 1 |
| 比率 - 输入:输出： | 2:10 |
| 差分 - 输入:输出： | 是/是 |
| 输入： | HSTL，PECL |
| 输出： | HSTL |
| 频率 - 最大： | 625MHz |
| 电源电压： | 3.135 V ~ 3.465 V |
| 工作温度： | -40°C ~ 110°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 32-LQFP |
| 供应商设备封装： | 32-TQFP（7x7） |
| 包装： | 带卷 (TR) |
MC100ES8111 DATASHEET
HSTL CLOCK FANOUT BUFFER
MC100ES8111 Revision 4
3
2009 Integrated Device Technology, Inc.
Table 3. Absolute Maximum Ratings(1)
1. Absolute maximum continuous ratings are those maximum values beyond which damage to the device may occur. Exposure to these
conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation at absolute-maximum-rated
conditions is not implied.
Symbol
Characteristics
Min
Max
Unit
Condition
VCC
Supply Voltage
–0.3
3.6
V
VCCO
Supply Voltage
–0.3
3.1
V
VIN
DC Input Voltage
–0.3
VCC + 0.3
V
VOUT
DC Output Voltage
–0.3
VCC + 0.3
V
IIN
DC Input Current
±20
mA
IOUT
DC Output Current
±50
mA
TS
Storage Temperature
–65
125
°C
TFunc
Functional Temperature Range
TA = –40
TJ = +110
°C
Table 4. General Specifications
Symbol
Characteristics
Min
Typ
Max
Unit
Condition
VTT
Output termination voltage
0
V
MM
ESD Protection (Machine model)
200
V
HBM
ESD Protection (Human body model)
2000
V
CDM
ESD Protection (Charged device model)
2000
V
LU
Latch-up Immunity
200
mA
CIN
Input Capacitance
4.0
pF
Inputs
θJA
Thermal resistance junction to ambient
JESD 51-3, single layer test board
JESD 51-6, 2S2P multilayer test board
83.1
73.3
68.9
63.8
57.4
59.0
54.4
52.5
50.4
47.8
86.0
75.4
70.9
65.3
59.6
60.6
55.7
53.8
51.5
48.8
°C/W
Natural convection
100 ft/min
200 ft/min
400 ft/min
800 ft/min
Natural convection
100 ft/min
200 ft/min
400 ft/min
800 ft/min
θJC
Thermal Resistance Junction to Case
23.0
26.3
°C/W
MIL-SPEC 883E
Method 1012.1
TJ
Operating Junction Temperature(1)
(continuous operation)
MTBF = 9.1 years
1. Operating junction temperature impacts device life time. Maximum continuous operating junction temperature should be selected
according to the application life time requirements (See application note AN1545 and the application section in this datasheet for more
information). The device AC and DC parameters are specified up to 110
°C junction temperature allowing the MC100ES8111 to be used
in applications requiring industrial temperature range. It is recommended that users of the MC100ES8111 employ thermal modeling
analysis to assist in applying the junction temperature specifications to their particular application.
110
°C
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相关代理商/技术参数 |
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| MC100ES8111FA | 功能描述:IC CLOCK BUFFER MUX 2:10 32-LQFP RoHS:否 类别:集成电路 (IC) >> 时钟/计时 - 时钟缓冲器，驱动器 系列:100ES 标准包装:1 系列:HiPerClockS™ 类型:扇出缓冲器（分配），多路复用器 电路数:1 比率 - 输入:输出:2:18 差分 - 输入:输出:是/无 输入:CML，LVCMOS，LVPECL，LVTTL，SSTL 输出:LVCMOS，LVTTL 频率 - 最大:250MHz 电源电压:2.375 V ~ 3.465 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:32-LQFP 供应商设备封装:32-TQFP（7x7） 包装:- 其它名称:800-1923-6 |
| MC100ES8111FAR2 | 制造商:Integrated Device Technology Inc 功能描述:CLOCK DRVR 2-IN HSTL 32LQFP - Tape and Reel |
| MC100H600FN | 功能描述:转换 - 电压电平 9-Bit TTL to ECL RoHS:否 制造商:Micrel 类型:CML/LVDS/LVPECL to LVCMOS/LVTTL 传播延迟时间:1.9 ns 电源电流:14 mA 电源电压-最大:3.6 V 电源电压-最小:3 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MLF-8 |
| MC100H600FNG | 功能描述:转换 - 电压电平 9-Bit TTL to ECL RoHS:否 制造商:Micrel 类型:CML/LVDS/LVPECL to LVCMOS/LVTTL 传播延迟时间:1.9 ns 电源电流:14 mA 电源电压-最大:3.6 V 电源电压-最小:3 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MLF-8 |
| MC100H600FNR2 | 功能描述:转换 - 电压电平 9-Bit TTL to ECL RoHS:否 制造商:Micrel 类型:CML/LVDS/LVPECL to LVCMOS/LVTTL 传播延迟时间:1.9 ns 电源电流:14 mA 电源电压-最大:3.6 V 电源电压-最小:3 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MLF-8 |
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