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参数资料
| 型号： | MC10SX1130DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 8/9页 |
| 文件大小： | 0K |
| 描述： | IC LED DRIVER LINEAR 16-SOIC |
| 标准包装： | 2,500 |
| 输出数： | 1 |
| 内部驱动器： | 是 |
| 类型 - 主要： | 通用 |
| 频率： | 300MHz |
| 电源电压： | +5V，-5.2V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 带卷 (TR) |
| 工作温度： | -40°C ~ 85°C |
MC10SX1130
T = 6.376 × 10 ? 9 e
Now to calculate the dissipated power on the chip for a
nominal application.
V CC =5V
V F = 1.5 V
V SET = 0.7 V
I MOD = 60 mA
I CC = 18 mA
so:
Pd = 5 * 18 + (5 - 1.5 - 0.7) * 60
Pd = 258 mW
This number can be entered into Equation 3 along with the
environmental information to calculate the nominal
operating junction temperature.
Because of the open loop feedback control in the bias
control circuitry, the revised I MOD value must be determined
given the tracking rate chosen so that the power dissipation
can be re-calculated. For assessing product reliability, worst
case values should be entered to calculate the maximum
junction temperature.
Reliability of Plastic Packages
Although today’s plastic packages are as reliable as
ceramic packages under most environmental conditions, as
the junction temperature increases a failure mode unique to
plastic packages becomes a significant factor in the long
term reliability of the device.
Modern plastic package assembly utilizes gold wire
performance failure of the affected pin. With this
relationship between intermetallic formation and junction
temperature established, it is incumbent on the designer to
ensure that the junction temperature for which a device will
operate is consistent with the long term reliability goals of
the system.
Reliability studies were performed at elevated ambient
temperatures (125 ° C) from which an Arrhenius Equation,
relating junction temperature to bond failure, was
established. The application of this equation yields the table
of Table 6. This table relates the junction temperature of a
device in a plastic package to the continuous operating time
before 0.1% bond failure (1 failure per 1000 bonds)
The MC10SX1130 device is designed with chip power
levels that permit acceptable reliability levels, in most
systems, under the conventional 500 lfpm (2.5 m/s) airflow.
11554.267
273.15 + T J
Where:
T = Time to 0.1% bond failure
Table 6. T J vs Time to 0.1% Bond Failure
Junction
Temp. ( ° C) Time (Hrs.) Time (yrs.)
80 1,032,200 117.8
90 419,300 47.9
bonded to aluminum bonding pads throughout the
electronics industry. As the temperature of the silicon
(junction temperature) increases, an intermetallic
compound forms between the gold and aluminum interface.
This intermetallic formation results in a significant increase
in the impedance of the wire bond and can lead to
100
110
120
130
140
178,700
79,600
37,000
17,800
8,900
20.4
9.1
4.2
2.0
1.0
ORDERING INFORMATION
Device
MC10SX1130D
MC10SX1130DG
MC10SX1130DR2
MC10SX1130DR2G
Package
SOIC ? 16
SOIC ? 16
(Pb ? Free)
SOIC ? 16
SOIC ? 16
(Pb ? Free)
Shipping ?
48 Units / Rail
48 Units / Rail
2500 / Tape & Reel
2500 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
8
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