参数资料
型号: MC13852EPR2
厂商: Freescale Semiconductor
文件页数: 9/30页
文件大小: 0K
描述: IC RF LNA 400MHZ-1GHZ 8 MLPD
标准包装: 1
频率: 400MHz ~ 1GHz
P1dB: 9.6dBm
增益: 18.3dB
噪音数据: 1.2dB
RF 型: 通用
电源电压: 2.3 V ~ 3 V
电流 - 电源: 5.5mA
测试频率: 900MHz
封装/外壳: 8-WFDFN 裸露焊盘
包装: 标准包装
其它名称: MC13852EPR2DKR
Applications Information
3.1
434 MHz Application
This application was designed to provide typical NF = 1.65 dB, S21 gain = 20 dB, OIP3 =10.6 dBm at
434 MHz. Typical performance that can be expected from this circuit at 2.75 V is listed in Table 6 . The
component values can be changed to enhance the performance of a particular parameter, but usually at the
expense of another. Two values of bias resistor R1 are shown to demonstrate performance for different IP3
and Icc requirements.
? Values of external resistor R1 are varied to adjust Icc and IP3.
? Inductor L3 provides bias to the logic circuit.
Figure 7 is the 434 MHz application schematic with package pinouts and the circuit component topology.
V cc
L3
270 nH
C4
0.1
uF
C5
33 pF
Enable
5
4
L2
4 7 nH
R2
C3
Gain
6
Logic
3
30 ohm
2 2 pF
RF
OUT
R3
82 ohm
L1
27 nH
C2
47 pF
7
2
R1
1.2 kohm
Rbias
8
1
Emit
.
C1
1 .3 pF
Figure 7. 434 MHz Application Schematic
Table 6. Typical 434 MHz Evaluation Board Performance (Vcc = 2.75V, TA = 25 ° C)
Characteristic
Symbol
Min
Typ
Max
Unit
R1 = 1.2 k Ω
Frequency
f
434
MHz
RF Gain
High Gain
Bypass
G
19.3
-9.5
20.3
-8.5
dB
Output Third Order Intercept Point
High Gain
Bypass
OIP3
9.5
15.5
10.6
16.6
dBm
Input Third Order Intercept Point
High Gain
Bypass
Out Ref P1dB
High Gain
In Ref P1dB
High Gain
IIP3
P1dBout
P1dBin
-10.7
24
6.8
-13.5
-9.7
25.1
7.8
-12.5
dBm
dBm
dBm
MC13852 Advance Information, Rev. 2.0
Freescale Semiconductor
9
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