参数资料
| 型号： | MC26LS30DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/14页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER LINE CONFIG 16SOIC |
| 产品变化通告： | Product Obsolescence 24/Jan/2011 |
| 标准包装： | 1 |
| 类型： | 驱动器 |
| 驱动器/接收器数： | 4/0 |
| 规程： | RS422，RS423 |
| 电源电压： | 4.75 V ~ 5.25 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 剪切带 (CT) |
| 其它名称： | MC26LS30DR2GOSCT |
MC26LS30
http://onsemi.com
10
transients induced onto the drivers’ outputs from the
external cable (from ESD, motor noise, nearby computers,
etc.).
Operating Temperature Range
The maximum ambient operating temperature, listed as
+85
°C, is actually a function of the system use (i.e.,
specifically how many drivers within a package are used)
and at what current levels they are operating. The maximum
power which may be dissipated within the package is
determined by:
PDmax +
TJmax * TA
R
qJA
where RθJA = package thermal resistance which is typically:
120
°C/W for the SOIC (D) package,
TJmax = max. allowable junction temperature (150°C)
TA = ambient air temperature near the IC package.
1) Differential Mode Power Dissipation
For the differential mode, the power dissipated within the
package is calculated from:
PD + [(VCC * VOD)
IO ] (each driver) ) (VCC
IB)
where: VCC = the supply voltage
value of IO
IB
= the internal bias current (Figure 7)
As indicated in the equation, the first term (in brackets) must
be calculated and summed for each of the two drivers, while
the last term is common to the entire package. Note that the
term (VCC VOD) is constant for a given value of IO and does
not vary with VCC. For an application involving the
following conditions:
TA = +85°C, IO = 60 mA (each driver), VCC = 5.25 V, the
suitability of the package types is calculated as follows.
The power dissipated is:
PD + [3.0 V
60 mA
2]
) (5.25 V
18 mA)
PD + 454 mW
The junction temperature calculates to:
TJ + 85°C ) (0.454 W
120
°C W) + 139°C for the
SOIC package.
Since the maximum allowable junction temperature is not
exceeded in any of the above cases, either package can be
used in this application.
2) SingleEnded Mode Power Dissipation
For the singleended mode, the power dissipated within
the package is calculated from:
PD + (IB
)
VCC) ) (IB
*
VEE) )
[(IO
(VCC * VOH)](each driver)
The above equation assumes IO has the same magnitude
for both output states, and makes use of the fact that the
identical. IB+ and IB are obtained from the right half of
given value of IO and does not vary with VCC. For an
application involving the following conditions:
TA = +85°C, IO = 60 mA (each driver), VCC = 5.25 V,
VEE = 5.25 V, the suitability of the package types is
calculated as follows.
The power dissipated is:
PD + 490 mW
PD + (24 mA
5.25 V)
) (*3.0 mA
*5.25 V) )
[ 60 mA
1.45 V
4.0 ]
The junction temperature calculates to:
TJ + 85°C ) (0.490 W
120
°C W) + 144°C for the
SOIC package.
Since the maximum allowable junction temperature is not
exceeded in any of the above cases, either package can be
used in this application.
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