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| 型号： | MC33151VDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL HS 8-SOIC |
| 标准包装： | 1 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 35ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 6.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | MC33151VDR2GOSCT |
MC34151, MC33151
ELECTRICAL CHARACTERISTICS (V CC = 12 V, for typical values T A = 25 ° C, for min/max values T A is the only operating
ambient temperature range that applies [Note 3], unless otherwise noted.)
Characteristics
Symbol
Min
Typ
Max
Unit
LOGIC INPUTS
Input Threshold Voltage ?
Input Current ? High State (V IH = 2.6 V)
Input Current ? Low State (V IL = 0.8 V)
Output Transition High to Low State
Output Transition Low to High State
V IH
V IL
I IH
I IL
?
0.8
?
?
1.75
1.58
200
20
2.6
?
500
100
V
m A
DRIVE OUTPUT
Output Voltage ? Low State (I Sink = 10 mA)
Output Voltage ? Low State (I Sink = 50 mA)
Output Voltage ? Low State (I Sink = 400 mA)
Output Voltage ? High State (I Source = 10 mA)
Output Voltage ? High State (I Source = 50 mA)
Output Voltage ? High State (I Source = 400 mA)
Output Pulldown Resistor
V OL
V OH
R PD
?
?
?
10.5
10.4
9.5
?
0.8
1.1
1.7
11.2
11.1
10.9
100
1.2
1.5
2.5
?
?
?
?
V
k W
SWITCHING CHARACTERISTICS (T A = 25 ° C)
Propagation Delay (10% Input to 10% Output, C L = 1.0 nF)
Logic Input to Drive Output Rise
Logic Input to Drive Output Fall
Drive Output Rise Time (10% to 90%) C L = 1.0 nF
Drive Output Rise Time (10% to 90%) C L = 2.5 nF
Drive Output Fall Time (90% to 10%) C L = 1.0 nF
Drive Output Fall Time (90% to 10%) C L = 2.5 nF
t PLH(in/out)
t PHL(in/out)
t r
t f
?
?
?
?
?
?
35
36
14
31
16
32
100
100
30
?
30
?
ns
ns
ns
TOTAL DEVICE
Power Supply Current
Standby (Logic Inputs Grounded)
Operating (C L = 1.0 nF Drive Outputs 1 and 2, f = 100 kHz)
Operating Voltage
I CC
V CC
?
?
6.5
6.0
10.5
?
10
15
18
mA
V
1. For optimum switching speed, the maximum input voltage should be limited to 10 V or V CC , whichever is less.
2. Maximum package power dissipation limits must be observed.
3. T low = 0 ° C for MC34151 T high = +70 ° C for MC34151
? 40 ° C for MC33151 +85 ° C for MC33151
http://onsemi.com
3
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