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参数资料
| 型号： | MC33151VDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 9/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL HS 8-SOIC |
| 标准包装： | 1 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 35ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 6.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | MC33151VDR2GOSCT |
MC34151, MC33151
V in
+
I B
V in
+
0
R g(on)
-
Base Charge
Removal
+
C 1
R g(off)
In noise sensitive applications, both conducted and radiated EMI can
be reduced significantly by controlling the MOSFET's turn-on and
turn-off times.
Figure 23. Controlled MOSFET Drive
V CC = 15 V
The totem-pole outputs can furnish negative base current for enhanced
transistor turn-off, with the addition of capacitor C 1 .
Figure 24. Bipolar Transistor Drive
4.7
0.1
+
6
+
+
+
-
+
5.7V
2
+
7
6.8 10
+
1N5819
47
+
+ V O ≈ 2.0 V CC
+
4
+
5
6.8
10
+
1N5819
- V O ≈ - V CC
330pF
47
+
3
10k
Output Load Regulation
The capacitor's equivalent series resistance limits the Drive Output Current
to 1.5 A. An additional series resistor may be required when using tantalum or
other low ESR capacitors.
Figure 25. Dual Charge Pump Converter
I O (mA)
0
1.0
10
20
30
50
+V O (V)
27.7
27.4
26.4
25.5
24.6
22.6
? V O (V)
? 13.3
? 12.9
? 11.9
? 11.2
? 10.5
? 9.4
http://onsemi.com
9
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