参数资料
型号: MC33151VDR2G
厂商: ON Semiconductor
文件页数: 8/12页
文件大小: 0K
描述: IC MOSFET DRIVER DUAL HS 8-SOIC
标准包装: 1
配置: 低端
输入类型: 反相
延迟时间: 35ns
电流 - 峰: 1.5A
配置数: 2
输出数: 2
电源电压: 6.5 V ~ 18 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 剪切带 (CT)
其它名称: MC33151VDR2GOSCT
MC34151, MC33151
LAYOUT CONSIDERATIONS
High frequency printed circuit layout techniques are
imperative to prevent excessive output ringing and overshoot.
Do not attempt to construct the driver circuit on
wire ? wrap or plug ? in prototype boards. When driving
large capacitive loads, the printed circuit board must contain
a low inductance ground plane to minimize the voltage spikes
induced by the high ground ripple currents. All high current
loops should be kept as short as possible using heavy copper
runs to provide a low impedance high frequency path. For
V CC
optimum drive performance, it is recommended that the
initial circuit design contains dual power supply bypass
capacitors connected with short leads as close to the V CC pin
and ground as the layout will permit. Suggested capacitors are
a low inductance 0.1 m F ceramic in parallel with a 4.7 m F
tantalum. Additional bypass capacitors may be required
depending upon Drive Output loading and circuit layout.
Proper printed circuit board layout is extremely
critical and cannot be over emphasized.
47
0.1
6
V in
2
+
+
+ + -
5.7V
+
7
V in
+
R g
D 1
TL494
or
TL594
4
+
3
+
5
1N5819
Series gate resistor R g may be needed to damp high frequency parasitic
oscillations caused by the MOSFET input capacitance and any series
wiring inductance in the gate-source circuit. R g will decrease the
MOSFET switching speed. Schottky diode D 1 can reduce the driver's
The MC34151 greatly enhances the drive capabilities of common switching
regulators and CMOS/TTL logic devices.
Figure 19. Enhanced System Performance with
Common Switching Regulators
+
+
7
power dissipation due to excessive ringing, by preventing the output pin
from being driven below ground.
Figure 20. MOSFET Parasitic Oscillations
+
4X
1N5819
+
+
Isolation
Boundary
5
1N
5819
3
Output Schottky diodes are recommended when driving inductive loads at
high frequencies. The diodes reduce the driver's power dissipation by
preventing the output pins from being driven above V CC and below ground.
Figure 21. Direct Transformer Drive
http://onsemi.com
8
3
Figure 22. Isolated MOSFET Drive
相关PDF资料
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