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| 型号： | MC33151VDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 8/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL HS 8-SOIC |
| 标准包装： | 1 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 35ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 6.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | MC33151VDR2GOSCT |
MC34151, MC33151
LAYOUT CONSIDERATIONS
High frequency printed circuit layout techniques are
imperative to prevent excessive output ringing and overshoot.
Do not attempt to construct the driver circuit on
wire ? wrap or plug ? in prototype boards. When driving
large capacitive loads, the printed circuit board must contain
a low inductance ground plane to minimize the voltage spikes
induced by the high ground ripple currents. All high current
loops should be kept as short as possible using heavy copper
runs to provide a low impedance high frequency path. For
V CC
optimum drive performance, it is recommended that the
initial circuit design contains dual power supply bypass
capacitors connected with short leads as close to the V CC pin
and ground as the layout will permit. Suggested capacitors are
a low inductance 0.1 m F ceramic in parallel with a 4.7 m F
tantalum. Additional bypass capacitors may be required
depending upon Drive Output loading and circuit layout.
Proper printed circuit board layout is extremely
critical and cannot be over emphasized.
47
0.1
6
V in
2
+
+
+ + -
5.7V
+
7
V in
+
R g
D 1
TL494
or
TL594
4
+
3
+
5
1N5819
Series gate resistor R g may be needed to damp high frequency parasitic
oscillations caused by the MOSFET input capacitance and any series
wiring inductance in the gate-source circuit. R g will decrease the
MOSFET switching speed. Schottky diode D 1 can reduce the driver's
The MC34151 greatly enhances the drive capabilities of common switching
regulators and CMOS/TTL logic devices.
Figure 19. Enhanced System Performance with
Common Switching Regulators
+
+
7
power dissipation due to excessive ringing, by preventing the output pin
from being driven below ground.
Figure 20. MOSFET Parasitic Oscillations
+
4X
1N5819
+
+
Isolation
Boundary
5
1N
5819
3
Output Schottky diodes are recommended when driving inductive loads at
high frequencies. The diodes reduce the driver's power dissipation by
preventing the output pins from being driven above V CC and below ground.
Figure 21. Direct Transformer Drive
http://onsemi.com
8
3
Figure 22. Isolated MOSFET Drive
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MC33152 | 制造商:SPC Multicomp 功能描述:FUSE RESETTABLE RADIAL 4A 制造商:SPC Multicomp 功能描述:FUSE, PTC RESET, RADIAL, 16V, 4A 制造商:SPC Multicomp 功能描述:FUSE, PTC RESET, 16V, 4A, RADIAL; Holding Current:4A; Tripping Current:6.8A; Initial Resistance Max:0.063ohm; Operating Voltage:16V; PTC Fuse Case:Radial Leaded; External Depth:3mm; Initial Resistance Min:0.02ohm; Lead Spacing:5.1mm ;RoHS Compliant: Yes |
| MC33152 | 制造商:SPC Multicomp 功能描述:PTC Resettable Fuse |
| MC33152D | 功能描述:功率驱动器IC 1.5A High Speed Dual RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MC33152DG | 功能描述:功率驱动器IC 1.5A High Speed Dual Non-Inverting MOSFET RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MC33152DG | 制造商:ON Semiconductor 功能描述:Buffer / Driver / Receiver Logic IC Pack |
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