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参数资料
| 型号： | MC33152P |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET DUAL HS 8DIP |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 1,000 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 55ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 6.1 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
| 其它名称： | MC33152POS |
MC34152, MC33152, NCV33152
MAXIMUM RATINGS
Rating
Power Supply Voltage
Logic Inputs (Note 1)
Drive Outputs (Note 2)
Totem Pole Sink or Source Current
Diode Clamp Current (Drive Output to V CC )
Symbol
V CC
V in
I O
I O(clamp)
Value
20
? 0.3 to +V CC
1.5
1.0
Unit
V
V
A
Power Dissipation and Thermal Characteristics
D Suffix, Plastic Package Case 751
Maximum Power Dissipation @ T A = 50 ° C
Thermal Resistance, Junction ? to ? Air
P Suffix, Plastic Package, Case 626
Maximum Power Dissipation @ T A = 50 ° C
Thermal Resistance, Junction ? to ? Air
Operating Junction Temperature
P D
R q JA
P D
R q JA
T J
0.56
180
1.0
100
+150
W
° C/W
W
° C/W
° C
Operating Ambient Temperature
Operating Ambient Temperature
Operating Ambient Temperature
Storage Temperature Range
MC34152
MC33152
MC33152V, NCV33152
T A
T stg
0 to +70
? 40 to +85
? 40 to +125
? 65 to +150
° C
° C
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
ESD
2000
200
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. For optimum switching speed, the maximum input voltage should be limited to 10 V or V CC , whichever is less.
2. Maximum package power dissipation limits must be observed.
http://onsemi.com
2
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