参数资料
型号: MC33152P
厂商: ON Semiconductor
文件页数: 5/12页
文件大小: 0K
描述: IC DRIVER MOSFET DUAL HS 8DIP
产品变化通告: LTB Notification 03/Jan/2008
标准包装: 1,000
配置: 低端
输入类型: 非反相
延迟时间: 55ns
电流 - 峰: 1.5A
配置数: 2
输出数: 2
电源电压: 6.1 V ~ 18 V
工作温度: -40°C ~ 85°C
安装类型: 通孔
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-PDIP
包装: 管件
其它名称: MC33152POS
MC34152, MC33152, NCV33152
3.0
High State Clamp (Drive
2.0
Output Driven Above V CC )
V CC = 12 V
80 m s Pulsed Load
120 Hz Rate
T A = 25 ° C
1.0
0
0
V CC
Low State Clamp (Drive
GND
Output Driven Below Ground)
-1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I O , OUTPUT CLAMP CURRENT (A)
Figure 8. Drive Output Clamp Voltage
versus Clamp Current
0
-1.0
- 2.0
V CC
Source Saturation V CC = 12 V
(Load to Ground) 80 m s Pulsed Load
120 Hz Rate
T A = 25 ° C
0
- 0.5
- 0.7
- 0.9
-1.1
Source Saturation
(Load to Ground)
V CC = 12 V
V CC
I source = 10 mA
I source = 400 mA
- 3.0
1.9
3.0
1.7
I sink = 400 mA
2.0
1.0
0
0
0.2
0.4
Sink Saturation
(Load to V CC )
0.6 0.8
GND
1.0
1.2
1.4
1.5
1.0
0.8
0.6
0
- 55
Sink Saturation
(Load to V CC )
- 25
0
GND
25
50
75
I sink = 10 mA
100 125
I O , OUTPUT CLAMP CURRENT (A)
Figure 9. Drive Output Saturation Voltage
versus Load Current
T A , AMBIENT TEMPERATURE ( ° C)
Figure 10. Drive Output Saturation Voltage
versus Temperature
V CC = 12 V
90% -
V CC = 12 V
V in = 0 V to 5.0 V
90% -
V in = 0 V to 5.0 V
C L = 1.0 nF
T A = 25 ° C
10% -
C L = 1.0 nF
T A = 25 ° C
10 ns/DIV
Figure 11. Drive Output Rise Time
10% -
http://onsemi.com
5
10 ns/DIV
Figure 12. Drive Output Fall Time
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