- 您现在的位置：买卖IC网 > PDF目录359132 > MC33395 (飞思卡尔半导体(中国)有限公司) Three-Phase Gate Driver IC(3相栅极驱动器) PDF资料下载
参数资料
| 型号： | MC33395 |
| 厂商： | 飞思卡尔半导体(中国)有限公司 |
| 英文描述： | Three-Phase Gate Driver IC(3相栅极驱动器) |
| 中文描述： | 三相栅极驱动器IC（3相栅极驱动器） |
| 文件页数： | 10/16页 |
| 文件大小： | 534K |
| 代理商： | MC33395 |
33395
10
Go to: www.freescale.com
SYSTEM/APPLICATION INFORMATION
INTRODUCTION
The 33395 and 33395T devices are designed to provide the
necessary drive and control signal buffering and amplification to
enable a DSP or MCU to control a three-phase array of power
MOSFETs such as would be required to energize the windings
of powerful brushless DC (BLDC) motors. It contains built-in
charge pump circuitry so that the MOSFET array may consist
entirely of N-Channel MOSFETs. It also contains feedback
sensing circuitry and control circuitry to provide a robust overall
motor control design.
FUNCTIONAL DESCRIPTION
Gate Drive Circuits
The gate drive outputs (GDH1, GDH2, etc.) supply the peak
currents required to turn ON and hold ON the MOSFETs, as
well as turn OFF and hold OFF the MOSFETs.
Charge Pump
The current capability of the charge pump is sufficient to
supply the gate drive circuit’s demands when PWM’ing at up to
28 kHz. Two external charge pump capacitors and a reservoir
capacitor are required to complete the charge pump’s circuitry.
Charge reservoir capacitance is a function of the total
MOSFET gate charge (Q
G
) gate drive voltage level relative to
the source (V
GS
) and the allowable sag of the drive level during
the turn-on interval (V
SAG
). C
RES
can be expressed by the
following formula:
For example, for Q
G
= 60 nC, V
GS
= 14 V, V
SAG
= 0.2 V:
Proper charge pump capacitance is required to maintain,
and provide for, adequate gate drive during high demand turn-
ON intervals. Use the following formula to determine values for
C
P1
and
C
P2
:
For example, for the above determination of C
RES
= 0.15
μ
F:
By averaging these two values, the proper C
P
n
value can be
determined:
C
P1
and C
P2
=(0.0075
μ
F + 0.015
μ
F)
÷
2 = 0.01
μ
F
Thermal Shutdown Function
The device has internal temperature sensing circuitry which
activates a protective shutdown function should the die reach
excessively elevated temperatures. This function effectively
limits power dissipation and thus protects the device.
Overvoltage Shutdown Function
When the supply voltage (V
IGN
) exceeds the specified over-
voltage shutdown level, the part will automatically shut down to
protect both internal circuits as well as the load. Operation will
resume upon return of V
IGN
to normal operating levels.
Low Voltage Reset Function
When the logic supply voltage (V
DD
) drops below the
minimum voltage level or when the part is initially powered up,
this function will turn OFF and hold OFF the external MOSFETs
until the voltage increases above the minimum voltage level
required for normal operation.
Control Logic
The control logic block controls when the low-side and high-
side drivers are enabled. The logic implements the Truth Table
found in the specification and monitors the M0, M1, PWM, CL,
OT, OV, LSE, and HSE terminals. Note that the drivers are
enabled 3
μ
s after the PWM edge. During complimentary chop
mode the high-side and low-side drives are alternatively
enabled and disabled during the PWM cycle. To prevent shoot-
through current, the high-side drive turn-on is delayed by t
D1
,
and the low-side drive turn on is delayed by t
D2
(see
Figure 2
,
page 9).
C
RES
=
Q
G
x V
GS
2 x V
GS
x V
SAG
- V
SAG
2
C
RES
=
(60 nC) x (14 V)
2 x (14 V) x (0.2 V) - (0.2)
2
= 0.15
μ
F
C
RES
20
< C
P1
= C
P2
<
10
C
RES
0.15
μ
F
20
= 0.075
μ
F, lower limit; and
10
0.15
μ
F
= .015
μ
F, upper limit
F
Freescale Semiconductor, Inc.
For More Information On This Product,
n
.
相关PDF资料 |
PDF描述 |
|---|---|
| MC33397 | Dual/Hex Low-Side Switch with Both SPI and Parallel Input Control(带SPI和并口输入控制的2或6低端开关) |
| MC33399 | “Local Interconnect Network” Physical Interface(“本地互联网”（LIN）物理接口) |
| MC33486 | Dual High Side Switch for H-Bridge Automotive Applications(适合于H桥自动应用的双高端开关) |
| MC33661 | LIN Enhanced Physical Interface(LIN网增强型物理接口) |
| MC33689 | System Basis Chip with LIN transceiver(带LIN收发器的系统基片) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MC33395DWB | 功能描述:马达/运动/点火控制器和驱动器 TPD RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
| MC33395DWBR2 | 功能描述:马达/运动/点火控制器和驱动器 TPD RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
| MC33395EW | 功能描述:马达/运动/点火控制器和驱动器 TPD - THREE PHASE DRIVER RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
| MC33395EWR2 | 功能描述:马达/运动/点火控制器和驱动器 TPD - THREE PHASE DRIVER RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
| MC33395TDWB | 功能描述:马达/运动/点火控制器和驱动器 TPDT RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。