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| 型号： | MC33486 |
| 厂商： | 飞思卡尔半导体(中国)有限公司 |
| 英文描述： | Dual High Side Switch for H-Bridge Automotive Applications(适合于H桥自动应用的双高端开关) |
| 中文描述： | 双通道高边开关的H -桥汽车应用（适合于?桥自动应用的双高端开关） |
| 文件页数： | 6/9页 |
| 文件大小： | 392K |
| 代理商： | MC33486 |
MC33486
DEVICE DESCRIPTION
Dual High Side Switch for H-Bridge Automotive Applications
6
Introduction
These devices are intended for full H-bridge automotive
applications. The bridge is partitioned into three blocks, the
DHSB and two low side MOSFETS, each block has a
dedicated package.
The DHSB incorporates two 15m ohm N-channel high
side power MOSFETS, high side current sensing , fault
protection and low side gate drivers.The inputs are CMOS
compatible, so they can directly interface with a
microncontroller. The low side gate drivers control and protect
the two external low sides. When the three blocks are
combined the outputs (OUT1 and OUT2) are fully protected
against shorts to GND, Shorts to Vbat, shorted loads, over/
under voltage and over temperature.
Power supply
The device can be directly connected to the power supply
line. The device has a standby mode (Wake at low logic level)
with a ultra low consumption (10uA max). In operation when
inputs are active, the supply current is up to 20mA.
With the high current and fast switching ability of the
DHSB it is recommended that sufficient capacitance (tens of
microfarads) be placed between Vbat and gnd of the IC. This
will help to insure the power supply stays within the specified
limits.
Reverse battery protection.
The device cannot sustain more than 1.5V of a reverse
battery conditions because of the two body diodes of the
power MOSFETs, which are forward biased during a reverse
battery condition. A specific protection must be implemented.
Figure 1. i Reverse Battery protection schematic
A reverse battery component might be needed in the gnd
pin of the application (i.e diode or Mosfet) in order to achieve
both reverse battery and negative transient pulses immunity.
If a polarized capacitor is used, it can be placed as shown
in Figure 1. .
Loss of ground protection
As shown in the Figure 1. , a loss of ground has no bad
impact on the DHSB, since the ground pin of the device is the
same as the ground of the low side.
Over/Under Voltage Protection
If the battery voltage falls to a level below 8.0V, the outputs
are turned low (Low Sides ON) in a low speed mode. The
DHSB goes back into normal operation mode as soon as the
Vbat rise above the undervoltage threshold. The undervoltage
protection circuitry has hysteresis.
The control circuitry also has an overvoltage detection
which turns the Low sides ON and protects the load in case of
Vbat exceeding 28V.The gate drivers will also be clamped to
14V to protect the external low side FETs. The Low sides
remain in the ON state, until the over-voltage condition is
removed.
Undervoltage and Overvoltage are not reported on the
status output.
Self-adjusted switching speed mode
This feature allows for reduction in EMC and power
dissipation depending on the application.The DHSB has two
switching speeds (high and low) depending on the input pulse
width. The high speed condition is active when the delay
between two consecutive input edges is below 280us. The
low speed mode is active when the delay between two
consecutive input edges is above 280us. The 280us delay
corresponds about to a 2kHz frequency with a duty cycle of
50%.
Current Recopy
This feature provides a current mirror with the ratio of 1/
3700 of the high side output current. An external resistor must
be connected to the Cur R pin and then tied to a
microcontroller A/D input for analog voltage measurement.
The Cur R pin is internally clamped (Vclst) to protect the MCU
A/D input.
Figure 2. Current Recopy Principle.
In case a ground shift occurs between the MCU and the
DHSB, the amplifier A (see Figure 2. ), will adapt its output to
keep the same I copy. Of course the shift has to keep between
+/- 1V.
Status
The device has a single status pins which reports over
temperature and/or over current faults. See the Functional
Truth Table for all faults that are reported on this signal pin.
This pin is an open drain structure and needs an external pull
up resistor.
gnd
MC33486
C
Vbat
M
External
resistor
Logic
gnd
To A/D
MC33486
gnd
I load
I copy
+
-
5000
1
R
A
M1
Power
Sense
Cur R
F
Freescale Semiconductor, Inc.
For More Information On This Product,
n
.
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| MC33486ADH | 功能描述:电源开关 IC - 配电 DUALHIGH-SIDE BRIDGE RoHS:否 制造商:Exar 输出端数量:1 开启电阻（最大值）:85 mOhms 开启时间（最大值）:400 us 关闭时间（最大值）:20 us 工作电源电压:3.2 V to 6.5 V 电源电流（最大值）: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5 |
| MC33486ADHR2 | 功能描述:电源开关 IC - 配电 DUALHIGH-SIDE BRIDGE RoHS:否 制造商:Exar 输出端数量:1 开启电阻（最大值）:85 mOhms 开启时间（最大值）:400 us 关闭时间（最大值）:20 us 工作电源电压:3.2 V to 6.5 V 电源电流（最大值）: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5 |
| MC33486DH | 功能描述:IC SWITCH DUAL H-SIDE 20-HSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 电机和风扇控制器，驱动器 系列:- 标准包装:1 系列:- 应用:直流电机驱动器，步进电机驱动器 评估套件:- 输出数:1 或 2 电流 - 输出:750mA 电压 - 负载:10 V ~ 40 V 电源电压:4.5 V ~ 5.5 V 工作温度:-20°C ~ 70°C 安装类型:表面贴装 封装/外壳:24-BFSOP（0.295"，7.50mm 宽） 供应商设备封装:24-SOP 包装:Digi-Reel® 其它名称:MTS62C19A-HS105DKR |
| MC33493ADTBE | 功能描述:射频发射器 UHF TRANSMITTER RoHS:否 制造商:Micrel 类型:ASK Transmitter 封装 / 箱体:SOT-23-6 工作频率:300 MHz to 450 MHz 封装:Reel |
| MC33493ADTBER2 | 功能描述:射频发射器 UHF TRANSMITTER RoHS:否 制造商:Micrel 类型:ASK Transmitter 封装 / 箱体:SOT-23-6 工作频率:300 MHz to 450 MHz 封装:Reel |
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