参数资料
型号: MC33502DR2G
厂商: ON Semiconductor
文件页数: 9/15页
文件大小: 0K
描述: IC OPAMP DUAL R-R 1V 8SOIC
产品变化通告: Product Obsolescence 29/Oct/2010
标准包装: 1
系列: SMARTMOS™
放大器类型: 通用
电路数: 2
输出类型: 满摆幅
转换速率: 3 V/µs
增益带宽积: 5MHz
电流 - 输入偏压: 0.04pA
电压 - 输入偏移: 500µV
电流 - 电源: 1.65mA
电流 - 输出 / 通道: 70mA
电压 - 电源,单路/双路(±): 1 V ~ 7 V,±0.5 V ~ 3.5 V
工作温度: -40°C ~ 105°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 剪切带 (CT)
其它名称: MC33502DR2GOSCT
MC33502
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V, VEE = 0 V, VCM = VO = VCC/2, RL to VCC/2, TA = 25°C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Input Offset Voltage (VCM = 0 to VCC)
VIO
mV
VCC = 1.0 V
TA = 25°C
5.0
0.5
5.0
TA = 40° to 105°C
7.0
7.0
VCC = 3.0 V
TA = 25°C
5.0
0.5
5.0
TA = 40° to 105°C
7.0
7.0
VCC = 5.0 V
TA = 25°C
5.0
0.5
5.0
TA = 40° to 105°C
7.0
7.0
Input Offset Voltage Temperature Coefficient (RS = 50 W)
DVIO/DT
8.0
mV/°C
TA = 40° to 105°C
Input Bias Current (VCC = 1.0 to 5.0 V)
I IIB I
0.00004
10
nA
Common Mode Input Voltage Range
VICR
VEE
VCC
V
Large Signal Voltage Gain
AVOL
kV/V
VCC = 1.0 V (TA = 25°C)
RL = 10 kW
25
100
RL = 1.0 kW
5.0
50
VCC = 3.0 V (TA = 25°C)
RL = 10 kW
50
500
RL = 1.0 kW
25
100
VCC = 5.0 V (TA = 25°C)
RL = 10 kW
50
500
RL = 1.0 kW
25
200
Output Voltage Swing, High (VID = ±0.2 V)
VOH
V
VCC = 1.0 V (TA = 25°C)
RL = 10 kW
0.9
0.95
RL = 600 W
0.85
0.88
VCC = 1.0 V (TA = 40° to 105°C)
RL = 10 kW
0.85
RL = 600 W
0.8
VCC = 3.0 V (TA = 25°C)
RL = 10 kW
2.9
2.93
RL = 600 W
2.8
2.84
VCC = 3.0 V (TA = 40° to 105°C)
RL = 10 kW
2.85
RL = 600 W
2.75
VCC = 5.0 V (TA = 25°C)
RL = 10 kW
4.9
4.92
RL = 600 W
4.75
4.81
VCC = 5.0 V (TA = 40° to 105°C)
RL = 10 kW
4.85
RL = 600 W
4.7
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MC33502DR2G 制造商:ON Semiconductor 功能描述:Operational Amplifier (Op-Amp) IC
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