参数资料
型号: MC34652EFR2
厂商: Freescale Semiconductor
文件页数: 23/26页
文件大小: 1802K
描述: IC CTRLR HOT SWAP NEG V 16-SOIC
标准包装: 2,500
类型: 热交换开关
应用: 通用
内部开关:
电流限制: 2A
电源电压: 15 V ~ 80 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC N
包装: 带卷 (TR)
Analog Integrated Circuit Device Data
Freescale Semiconductor
23
34652
TYPICAL APPLICATIONS
rchived by Freescale Semiconductor, Inc., 2008
SHORT CIRCUIT DETECTION
If the current going through the load becomes > 5.0 A, the
Power MOSFET is discharged very fast (in less than 10
 約)
to try to regulate the current, and the 34652 is in the
overcurrent mode for 3.0 ms. Then it follows the pattern
outlined in the
Overcurrent Limit
 paragraph above.
POWER MOSFET ENERGY CAPABILITY
Figure 24
 shows a projected energy capability of the 
devices internal Power MOSFET under a drain to source
voltage of 82 V and an ambient temperature of 90癈. It is
compared to the energy levels required for the capacitive
loads of 100 糉, 200 糉, and 400 糉 at 80 V for the
discharge periods of 16 ms, 32 ms, and 64 ms, respectively.
It is clear that the Power MOSFET well exceeds the required
energy capability for all three cases with a sufficient margin.
For example, the 400 糉 capacitor load with a 64 ms
discharge time requires an energy capability of about
1540 mJ, which is well below the Power MOSFET capability
of about 3500 mJ. As a result of this analysis, the 33652 is
expected to more than meet all energy capability
requirements for the possible capacitive loads.
 Figure 24. Projected Energy Capability of the Power
MOSFET Compared to the Required Energy Levels of
400 糉
200 糉
100 糉
EstimatedforArea=1.7mm
2
0
500
1000
1500
2000
2500
3000
3500
Time (ms)
0
20
40
60
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