参数资料
型号: MC34912BAC
厂商: Freescale Semiconductor
文件页数: 18/95页
文件大小: 0K
描述: IC SYSTEM BASIS CHIP LIN 32-LQFP
标准包装: 250
应用: 系统基础芯片
电流 - 电源: 4.5mA
电源电压: 5.5 V ~ 18 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 32-LQFP
供应商设备封装: 32-LQFP(7x7)
包装: 托盘
MC33912G5AC / MC34912G5AC
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 5.5 V ?? V SUP ? 18 V, -40°C ? T A ? 125°C for the 33912 and -40°C ? T A ? 85°C for the
34912, unless otherwise noted. Typical values noted reflect the approximate parameter mean at T A = 25°C under nominal
conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR NORMAL SLEW RATE - 20.0KBIT/SEC ACCORDING TO LIN PHYSICAL
LAYER SPECIFICATION (54) , (55)
Duty Cycle 1:
TH REC(MAX) = 0.744 * V SUP
TH DOM(MAX) = 0.581 * V SUP
D1
D1 = t BUS_REC(MIN) /(2 x t BIT ), t BIT = 50 μs, 7.0 V ?? V SUP ??? 18 V
Duty Cycle 2:
D2
0.396
TH REC(MIN) = 0.422 * V SUP
TH DOM(MIN) = 0.284 * V SUP
D2 = t BUS_REC(MAX) /(2 x t BIT ), t BIT = 50 μs, 7.6 V ?? V SUP ??? 18 V
0.581
LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR SLOW SLEW RATE - 10.4KBIT/SEC ACCORDING TO LIN PHYSICAL LAYER
SPECIFICATION (54) , (56)
Duty Cycle 3:
TH REC(MAX) = 0.778 * V SUP
TH DOM(MAX) = 0.616 * V SUP
D3
D3 = t BUS_REC(MIN) /(2 x t BIT ), t BIT = 96 μs, 7.0 V ?? V SUP ??? 18 V
Duty Cycle 4:
D4
0.417
TH REC(MIN) = 0.389 * V SUP
TH DOM(MIN) = 0.251 * V SUP
D4 = t BUS_REC(MAX) /(2 x t BIT ), t BIT = 96 μs, 7.6 V ?? V SUP ??? 18 V
0.590
Notes
54. Bus load R BUS and C BUS 1.0 nF / 1.0 k ? , 6.8 nF / 660 ? , 10 nF / 500 ? . Measurement thresholds: 50% of TXD signal to LIN signal
threshold defined at each parameter. See Figure 6 , page 21 .
55. See Figure 7 , page 21 .
56. See Figure 8 , page 21 .
33912
Analog Integrated Circuit Device Data ?
18
Freescale Semiconductor
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