参数资料
型号: MC9328MXSVP10R2
厂商: Freescale Semiconductor
文件页数: 9/74页
文件大小: 0K
描述: IC MCU I.MXS 100MHZ 225-MAPBGA
标准包装: 1,000
系列: i.MXS
核心处理器: ARM9
芯体尺寸: 32-位
速度: 100MHz
连通性: EBI/EMI,I²C,SPI,SSI,UART/USART,USB
外围设备: DMA,I²S,LCD,POR,PWM,WDT
输入/输出数: 97
程序存储器类型: ROMless
电压 - 电源 (Vcc/Vdd): 1.7 V ~ 3.3 V
振荡器型: 外部
工作温度: 0°C ~ 70°C
封装/外壳: 225-LFBGA
包装: 带卷 (TR)
Electrical Characteristics
MC9328MXS Technical Data, Rev. 3
Freescale Semiconductor
17
3.3
Power Sequence Requirements
For required power-up and power-down sequencing, please refer to the “Power-Up Sequence” section of
application note AN2537 on the i.MX applications processor website.
3.4
DC Electrical Characteristics
Table 6 contains both maximum and minimum DC characteristics of the i.MXS processor.
Table 5. Recommended Operating Range
Symbol
Rating
Minimum
Maximum
Unit
TA
Operating temperature range
MC9328MXSVP10
070
°C
TA
Operating temperature range
MC9328MXSCVP10
-40
85
°C
NVDD
I/O supply voltage (if using SPI, LCD, and USBd which are only 3 V
interfaces)
2.70
3.30
V
NVDD
I/O supply voltage (if not using the peripherals listed above)
1.70
3.30
V
QVDD
Internal supply voltage (Core = 100 MHz)
1.70
1.90
V
AVDD
Analog supply voltage
1.70
3.30
V
Table 6. Maximum and Minimum DC Characteristics
Number or
Symbol
Parameter
Min
Typical
Max
Unit
Iop
Full running operating current at 1.8V for QVDD, 3.3V for
NVDD/AVDD (Core = 96 MHz, System = 96 MHz, driving
TFT display panel, and OS with MMU enabled memory
system is running on external SDRAM).
QVDD at
1.8V = 120mA;
NVDD+AVDD at
3.0V = 30mA
–mA
Sidd1
Standby current
(Core = 100 MHz, QVDD = 1.8V, temp = 25
°C)
–25
μA
Sidd2
Standby current
(Core = 100 MHz, QVDD = 1.8V, temp = 55
°C)
–45
μA
Sidd3
Standby current
(Core = 100 MHz, QVDD = 1.9V, temp = 25
°C)
–35
μA
Sidd4
Standby current
(Core = 100 MHz, QVDD = 1.9V, temp = 55
°C)
–60
μA
VIH
Input high voltage
0.7VDD
–Vdd+0.2
V
VIL
Input low voltage
0.4
V
VOH
Output high voltage (IOH = 2.0 mA)
0.7VDD
–Vdd
V
VOL
Output low voltage (IOL = -2.5 mA)
0.4
V
IIL
Input low leakage current
(VIN = GND, no pull-up or pull-down)
––
±1
μA
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