参数资料
型号: MC9S08FL8CBM
厂商: Freescale Semiconductor
文件页数: 20/34页
文件大小: 0K
描述: MCU 8BIT 8K FLASH 32-SDIP
标准包装: 17
系列: S08
核心处理器: S08
芯体尺寸: 8-位
速度: 20MHz
连通性: SCI
外围设备: LVD,PWM,WDT
输入/输出数: 30
程序存储器容量: 8KB(8K x 8)
程序存储器类型: 闪存
RAM 容量: 768 x 8
电压 - 电源 (Vcc/Vdd): 4.5 V ~ 5.5 V
数据转换器: A/D 12x8b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 32-SDIP(0.400",10.16mm)
包装: 管件
Ordering Information
MC9S08FL16 Series Data Sheet, Rev. 3
Freescale Semiconductor
27
5.12
EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
5.12.1
Radiated Emissions
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell
method in accordance with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed
with the microcontroller installed on a custom EMC evaluation board while running specialized EMC test
software. The radiated emissions from the microcontroller are measured in a TEM cell in two package
orientations (the North and East).
The maximum radiated RF emissions of the tested configuration in all orientations are less than or equal
to the reported emissions levels.
6
Ordering Information
This section contains ordering information for MC9S08FL16 series devices. See below for an example of
the device numbering system.
5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25
C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
Table 15. Radiated Emissions, Electric Field
Parameter
Symbol
Conditions
Frequency
fOSC/fBUS
Level1
(Max)
1 Data based on qualification test results.
Unit
Radiated emissions,
electric field
VRE_TEM
VDD = 5.0 V
TA = 25
C
package type
32-pin LQFP
0.15 – 50 MHz
4 MHz crystal
19 MHz bus
9
dB
V
50 – 150 MHz
5
150 – 500 MHz
2
500 – 1000 MHz
1
IEC Level
N
SAE Level
1
Table 16. Device Numbering System
Device Number1
Memory
Available Packages2
FLASH
RAM
MC9S08FL16
16 KB
1024
32 SDIP
32 LQFP
MC9S08FL8
8 KB
768
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