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| 型号： | MC9S08FL8CBM |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 3/34页 |
| 文件大小： | 0K |
| 描述： | MCU 8BIT 8K FLASH 32-SDIP |
| 标准包装： | 17 |
| 系列： | S08 |
| 核心处理器： | S08 |
| 芯体尺寸： | 8-位 |
| 速度： | 20MHz |
| 连通性： | SCI |
| 外围设备： | LVD，PWM，WDT |
| 输入/输出数： | 30 |
| 程序存储器容量： | 8KB（8K x 8） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 768 x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 4.5 V ~ 5.5 V |
| 数据转换器： | A/D 12x8b |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 32-SDIP（0.400"，10.16mm） |
| 包装： | 管件 |
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Electrical Characteristics
MC9S08FL16 Series Data Sheet, Rev. 3
Freescale Semiconductor
11
TJ = TA + (PD JA)
Eqn. 1
where:
TA = Ambient temperature, C
JA = Package thermal resistance, junction-to-ambient, C/W
PD = Pint PI/O
Pint = IDD VDD, Watts — chip internal power
PI/O = Power dissipation on input and output pins — user determined
For most applications, PI/O far much smaller than Pint and can be neglected. An approximate relationship
between PD and TJ (if PI/O is neglected) is:
PD = K (TJ + 273 C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD (TA + 273 C) + JA (PD)
2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring
PD (at equilibrium) for an known TA. Using this value of K, the values of PD and TJ can be obtained by
5.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions must be taken to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
During the device qualification, ESD stresses were performed for the human body model (HBM) and the
charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless instructed otherwise in the device
specification.
Table 5. ESD and Latch-Up Test Conditions
Model
Description
Symbol
Value
Unit
Human
body
Series resistance
R1
1500
Storage capacitance
C
100
pF
Number of pulses per pin
—
3
—
Latch-up
Minimum input voltage limit
—
–2.5
V
Maximum input voltage limit
—
7.5
V
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| MC9S08FL8CLC | 功能描述:8位微控制器 -MCU S08 8K FLASH FL8 RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
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