参数资料
型号: MC9S08FL8CBM
厂商: Freescale Semiconductor
文件页数: 34/34页
文件大小: 0K
描述: MCU 8BIT 8K FLASH 32-SDIP
标准包装: 17
系列: S08
核心处理器: S08
芯体尺寸: 8-位
速度: 20MHz
连通性: SCI
外围设备: LVD,PWM,WDT
输入/输出数: 30
程序存储器容量: 8KB(8K x 8)
程序存储器类型: 闪存
RAM 容量: 768 x 8
电压 - 电源 (Vcc/Vdd): 4.5 V ~ 5.5 V
数据转换器: A/D 12x8b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 32-SDIP(0.400",10.16mm)
包装: 管件
Electrical Characteristics
MC9S08FL16 Series Data Sheet, Rev. 3
Freescale Semiconductor
9
5
Electrical Characteristics
5.1
Introduction
This section contains electrical and timing specifications for the MC9S08FL16 series of microcontrollers
available at the time of publication.
5.2
Parameter Classification
The electrical parameters shown in this supplement are guaranteed by various methods. To give the
customer a better understanding, the following classification is used and the parameters are tagged
accordingly in the tables where appropriate:
NOTE
The classification is shown in the column labeled “C” in the parameter
tables where appropriate.
5.3
Absolute Maximum Ratings
Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not
guaranteed. Stress beyond the limits specified in Table 3 may affect device reliability or cause permanent
damage to the device. For functional operating conditions, refer to the remaining tables in this section.
This device contains circuitry protecting against damage due to high static voltage or electrical fields;
however, it is advised that normal precautions be taken to avoid application of any voltages higher than
maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused
inputs are tied to an appropriate logic voltage level (for instance, either VSS or VDD) or the programmable
pullup resistor associated with the pin is enabled.
Table 2. Parameter Classifications
P
Those parameters are guaranteed during production testing on each individual device.
C
Those parameters are achieved by the design characterization by measuring a statistically relevant
sample size across process variations.
T
Those parameters are achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted. All values shown in the typical column are within this
category.
D
Those parameters are derived mainly from simulations.
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