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| 型号： | MC9S08QE32CLC |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 8-BIT, FLASH, 50.33 MHz, MICROCONTROLLER, PQFP32 |
| 封装： | 7 X 7 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, MS-026BBA, LQFP-32 |
| 文件页数： | 4/46页 |
| 文件大小： | 985K |
| 代理商： | MC9S08QE32CLC |
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MC9S08QE32 Series MCU Data Sheet, Rev. 6
Electrical Characteristics
Freescale Semiconductor
12
3.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions must be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the human body
model (HBM), the machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
3.6
DC Characteristics
This section includes information about power supply requirements and I/O pin characteristics.
Table 5. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human
Body
Series resistance
R1
1500
Ω
Storage capacitance
C
100
pF
Number of pulses per pin
—
3
Machine
Series resistance
R1
0
Ω
Storage capacitance
C
200
pF
Number of pulses per pin
—
3
Latch-up
Minimum input voltage limit
–2.5
V
Maximum input voltage limit
7.5
V
Table 6. ESD and Latch-Up Protection Characteristics
No.
Rating1
1 Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
Symbol
Min
Max
Unit
1
Human body model (HBM)
VHBM
±2000
—
V
2
Machine model (MM)
VMM
±200
—
V
3
Charge device model (CDM)
VCDM
±500
—
V
4
Latch-up current at TA = 85°CILAT
±100
—
mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MC9S08QE32CLC | 制造商:Freescale Semiconductor 功能描述:IC 8BIT MCU HCS08 50MHZ LQFP-32 |
| MC9S08QE32CLCR | 功能描述:8位微控制器 -MCU 9S08QE32-C&I-32LQFP RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| MC9S08QE32CLD | 功能描述:8位微控制器 -MCU 9S08QE32-C&I-44LQFP RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| MC9S08QE32CLD | 制造商:Freescale Semiconductor 功能描述:IC 8BIT MCU HC08 50MHZ LQFP-44 |
| MC9S08QE32CWL | 功能描述:8位微控制器 -MCU 9S08QE32-C&I-28SOICW RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
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