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参数资料
| 型号： | MC9S08SF4MTJ |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 15/30页 |
| 文件大小： | 0K |
| 描述： | MCU 8BIT 4K FLASH 20-TSSOP |
| 标准包装： | 75 |
| 系列： | S08 |
| 核心处理器： | S08 |
| 芯体尺寸： | 8-位 |
| 速度： | 40MHz |
| 连通性： | I²C |
| 外围设备： | LVD，POR，PWM，WDT |
| 输入/输出数： | 18 |
| 程序存储器容量： | 4KB（4K x 8） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 128 x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 2.7 V ~ 5.5 V |
| 数据转换器： | A/D 8x10b |
| 振荡器型： | 外部 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 20-TSSOP（0.173"，4.40mm 宽） |
| 包装： | 管件 |
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MC9S08SF4 Series MCU Data Sheet, Rev. 4
Flash Specifications
Freescale Semiconductor
22
3.12
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
For more detailed information about program/erase operations, see the Memory section.
10
D Programmable reference generator inputs
VIn1
(VDD50)
2.7
5.0
5.5
V
11
D Programmable reference generator inputs
VIn2
(VDD25)
2.25
2.5
2.75
V
12
C Programmable reference generator step size
Vstep
–0.25
0
0.25
LSB
13
P Programmable reference generator voltage range
Vprgout
VIn/32
—
Vin
V
Table 13. Flash Characteristics
Characteristic
Symbol
Min
Typical
Max
Unit
Supply voltage for program/erase
–40
C to 125C
Vprog/erase
2.7
—
5.5
V
Supply voltage for read operation
VRead
2.7
—
5.5
V
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
—
200
kHz
Internal FCLK period (1/FCLK)
tFcyc
5
—
6.67
s
Byte program time (random location)(2)
tprog
9tFcyc
Byte program time (burst mode)(2)
tBurst
4tFcyc
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
tPage
4000
tFcyc
Mass erase time(2)
tMass
20,000
tFcyc
Program/erase endurance3
TL to TH = –40 C to 125 C
T = 25
C
3 Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how Delta
defines typical endurance, please refer to engineering bulletin Typical Endurance for Nonvolatile Memory (document
EB619/D).
10,000
—
100,000
—
cycles
Data retention4
4 Typical data retention values are based on intrinsic capability of the technology measured at a high temperature and de-rated
to 25
C using the Arrhenius equation. For additional information on how Delta defines typical data retention, please refer to
engineering bulletin Typical Data Retention for Nonvolatile Memory (document EB618/D).
tD_ret
15
100
—
years
Table 12. PRACMP Specifications (continued)
Num
C
Characteristic
Symbol
Min
Typical
Max
Unit
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