参数资料
型号: MC9S08SF4MTJ
厂商: Freescale Semiconductor
文件页数: 28/30页
文件大小: 0K
描述: MCU 8BIT 4K FLASH 20-TSSOP
标准包装: 75
系列: S08
核心处理器: S08
芯体尺寸: 8-位
速度: 40MHz
连通性: I²C
外围设备: LVD,POR,PWM,WDT
输入/输出数: 18
程序存储器容量: 4KB(4K x 8)
程序存储器类型: 闪存
RAM 容量: 128 x 8
电压 - 电源 (Vcc/Vdd): 2.7 V ~ 5.5 V
数据转换器: A/D 8x10b
振荡器型: 外部
工作温度: -40°C ~ 125°C
封装/外壳: 20-TSSOP(0.173",4.40mm 宽)
包装: 管件
ESD Protection and Latch-Up Immunity
MC9S08SF4 Series MCU Data Sheet, Rev. 4
Freescale Semiconductor
7
Where:
TA = Ambient temperature, C
JA = Package thermal resistance, junction-to-ambient, C/W
PD = Pint PI/O
Pint = IDD VDD, Watts — chip internal power
PI/O = Power dissipation on input and output pins — user determined
For most applications, PI/O Pint and can be neglected. An approximate relationship between PD and TJ
(if PI/O is neglected) is:
PD = K (TJ + 273C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD (TA + 273C) + JA (PD)
2
Eqn. 3
Where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring
PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by
solving Equation 1 and Equation 2 iteratively for any value of TA.
3.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions must be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
During the device qualification ESD stresses were performed for the human body model (HBM) and the
charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
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