参数资料
型号: MCF51JU32VFM
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 微控制器/微处理器
英文描述: FLASH, 50 MHz, MICROCONTROLLER, QCC32
封装: 5 X 5 MM, QFN-32
文件页数: 22/72页
文件大小: 1031K
代理商: MCF51JU32VFM
4. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup. Minimum value assumes all
byte-writes to FlexRAM.
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the
FTFL to obtain an effective endurance increase for the EEPROM data. The built-in
EEPROM record management system raises the number of program/erase cycles that can
be attained prior to device wear-out by cycling the EEPROM data through a larger
EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_FlexRAM =
× Write_efficiency × n
EEPROM – 2 × EEESIZE
EEESIZE
nvmcycd
where
Writes_FlexRAM — minimum number of writes to each FlexRAM location
EEPROM — allocated FlexNVM based on DEPART; entered with Program
Partition command
EEESIZE — allocated FlexRAM based on DEPART; entered with Program Partition
command
Write_efficiency —
0.25 for 8-bit writes to FlexRAM
0.50 for 16-bit or 32-bit writes to FlexRAM
nnvmcycd — data flash cycling endurance
Memories and memory interfaces
MCF51JF128 Advance Information Data Sheet, Rev. 3, 08/2011.
Freescale Semiconductor, Inc.
Preliminary
29
相关PDF资料
PDF描述
MCF51QM128VFM FLASH, 50 MHz, MICROCONTROLLER, QCC32
MCF51QF64VLH FLASH, 50 MHz, MICROCONTROLLER, PQFP64
MCF51QH32VLF FLASH, 50 MHz, MICROCONTROLLER, PQFP48
MCF51QF32VLF FLASH, 50 MHz, MICROCONTROLLER, PQFP48
MCF51QH32VLH FLASH, 50 MHz, MICROCONTROLLER, PQFP64
相关代理商/技术参数
参数描述
MCF51JU32VHS 功能描述:32位微控制器 - MCU COLDFIREV1 32K FLASH RoHS:否 制造商:Texas Instruments 核心:C28x 处理器系列:TMS320F28x 数据总线宽度:32 bit 最大时钟频率:90 MHz 程序存储器大小:64 KB 数据 RAM 大小:26 KB 片上 ADC:Yes 工作电源电压:2.97 V to 3.63 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:LQFP-80 安装风格:SMD/SMT
MCF51JU64VHS 功能描述:32位微控制器 - MCU COLDFIREV1 64K FLASH RoHS:否 制造商:Texas Instruments 核心:C28x 处理器系列:TMS320F28x 数据总线宽度:32 bit 最大时钟频率:90 MHz 程序存储器大小:64 KB 数据 RAM 大小:26 KB 片上 ADC:Yes 工作电源电压:2.97 V to 3.63 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:LQFP-80 安装风格:SMD/SMT
MCF51JU64VLF 功能描述:32位微控制器 - MCU COLDFIREV1 64K FLASH RoHS:否 制造商:Texas Instruments 核心:C28x 处理器系列:TMS320F28x 数据总线宽度:32 bit 最大时钟频率:90 MHz 程序存储器大小:64 KB 数据 RAM 大小:26 KB 片上 ADC:Yes 工作电源电压:2.97 V to 3.63 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:LQFP-80 安装风格:SMD/SMT
MCF51MM128CLK 功能描述:32位微控制器 - MCU 32BIT 128K FLASH RoHS:否 制造商:Texas Instruments 核心:C28x 处理器系列:TMS320F28x 数据总线宽度:32 bit 最大时钟频率:90 MHz 程序存储器大小:64 KB 数据 RAM 大小:26 KB 片上 ADC:Yes 工作电源电压:2.97 V to 3.63 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:LQFP-80 安装风格:SMD/SMT
MCF51MM128CLL 制造商:Freescale Semiconductor 功能描述:32BIT 128K FLASH - Bulk