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参数资料
| 型号： | MCF51MM128CMB |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 32-BIT, FLASH, 50.33 MHz, MICROCONTROLLER, PBGA81 |
| 封装： | 10 X 10 MM, ROHS COMPLIANT, MAPBGA-81 |
| 文件页数： | 43/58页 |
| 文件大小： | 609K |
| 代理商： | MCF51MM128CMB |
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Electrical Characteristics
Freescale Semiconductor
48
3.14
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
For more detailed information about program/erase operations, see the Memory chapter in the Reference
Manual for this device (MCF51MM256RM).
Table 24. Flash Characteristics
#
Characteristic
Symbol
Min
Typical
Max
Unit
C
1
Supply voltage for program/erase
–40
C to 105CV
prog/erase
1.8
—
3.6
V
D
2
Supply voltage for read operation
VRead
1.8
—
3.6
V
D
3
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
—
200
kHz
D
4
Internal FCLK period (1/FCLK)
tFcyc
5
—
6.67
sD
5
Byte program time (random location)2
tprog
9tFcyc
P
6
Byte program time (burst mode)2
tBurst
4tFcyc
P
7
Page erase time2
2
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for calculating
approximate time to program and erase.
tPage
4000
tFcyc
P
8
Mass erase time2
tMass
20,000
tFcyc
P
9
Program/erase endurance3
TL to TH = –40C to + 105C
T = 25
C
3
Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on how Freescale defines
typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory.
10,000
—
100,000
—
cycles
C
10
Data retention4
4
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to 25
C using the
Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin EB618, Typical
Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
C
Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCF51MM128CML | 制造商:Freescale Semiconductor 功能描述:32-BIT MCF51MM COLDFIRE RISC 128KB FLASH 2.5V/3.3V 104-PIN - Bulk |
| MCF51MM128VLK | 功能描述:32位微控制器 - MCU 32BIT 128K FLASH RoHS:否 制造商:Texas Instruments 核心:C28x 处理器系列:TMS320F28x 数据总线宽度:32 bit 最大时钟频率:90 MHz 程序存储器大小:64 KB 数据 RAM 大小:26 KB 片上 ADC:Yes 工作电源电压:2.97 V to 3.63 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:LQFP-80 安装风格:SMD/SMT |
| MCF51MM128VLL | 制造商:Freescale Semiconductor 功能描述:32BIT 128K FLASH - Bulk |
| MCF51MM128VMB | 功能描述:32位微控制器 - MCU 32BIT 128K FLASH RoHS:否 制造商:Texas Instruments 核心:C28x 处理器系列:TMS320F28x 数据总线宽度:32 bit 最大时钟频率:90 MHz 程序存储器大小:64 KB 数据 RAM 大小:26 KB 片上 ADC:Yes 工作电源电压:2.97 V to 3.63 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:LQFP-80 安装风格:SMD/SMT |
| MCF51MM256 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:low-cost, low-power, high-performance ColdFire?? V1 family of 32-bit microcontrollers (MCUs) designed for handheld metering devices. |
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