参数资料
型号: MCF5212LCVM66J
厂商: Freescale Semiconductor
文件页数: 21/56页
文件大小: 0K
描述: IC MCU 256K FLASH 66MHZ 81MAPBGA
标准包装: 240
系列: MCF521x
核心处理器: Coldfire V2
芯体尺寸: 32-位
速度: 66MHz
连通性: I²C,SPI,UART/USART
外围设备: DMA,LVD,POR,PWM,WDT
输入/输出数: 56
程序存储器容量: 256KB(256K x 8)
程序存储器类型: 闪存
RAM 容量: 32K x 8
电压 - 电源 (Vcc/Vdd): 3 V ~ 3.6 V
数据转换器: A/D 8x12b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 81-LBGA
包装: 托盘
MCF5213 ColdFire Microcontroller, Rev. 3
Electrical Characteristics
Freescale Semiconductor
28
2.3
Thermal Characteristics
Table 22 lists thermal resistance values.
Table 21. Typical Active Current Consumption Specifications
Characteristic
Symbol
Typical1
Active
(SRAM)
1 Tested at room temperature with CPU polling a status register. All clocks were off except the UART and CFM (when
running from flash memory).
Typical1
Active
(Flash)
Peak2
2 Peak current measured with all modules active, and default drive strength with matching load.
Unit
1 MHz core & I/O
IDD
—3.48
mA
8 MHz core & I/O
7.28
13.37
19.02
16 MHz core & I/O
12.08
25.08
35.66
64 MHz core & I/O
40.14
54.62
85.01
80 MHz core & I/O
49.2
64.09
100.03
RAM standby supply current
Normal operation: VDD > VSTBY - 0.3 V
Transient condition: VSTBY - 0.3 V > VDD > VSS + 0.5 V
Standby operation: VDD < VSS + 0.5 V
ISTBY
N/A3
N/A3
3 Due to the errata “Non-functional RAM Standby Supply” in the MCF5213 Device Errata, V
STBY should be connected
directly to VDD and cannot be used for RAM standby operation.
μA
mA
μA
Analog supply current
Normal operation
Low-power stop
IDDA
16
50
mA
μA
Table 22. Thermal Characteristics
Characteristic
Symbol
Value
Unit
100 LQFP
Junction to ambient, natural convection
Single layer board (1s)
θ
JA
531,2
°C/W
Junction to ambient, natural convection
Four layer board (2s2p)
θ
JA
391,3
°C/W
Junction to ambient, (@200 ft/min)
Single layer board (1s)
θ
JMA
421,3
°C/W
Junction to ambient, (@200 ft/min)
Four layer board (2s2p)
θ
JMA
331,3
°C/W
Junction to board
θ
JB
254
°C/W
Junction to case
θ
JC
95
°C/W
Junction to top of package
Natural convection
Ψ
jt
26
°C/W
Maximum operating junction temperature
Tj
105
oC
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