参数资料
型号: MCF5212LCVM66J
厂商: Freescale Semiconductor
文件页数: 25/56页
文件大小: 0K
描述: IC MCU 256K FLASH 66MHZ 81MAPBGA
标准包装: 240
系列: MCF521x
核心处理器: Coldfire V2
芯体尺寸: 32-位
速度: 66MHz
连通性: I²C,SPI,UART/USART
外围设备: DMA,LVD,POR,PWM,WDT
输入/输出数: 56
程序存储器容量: 256KB(256K x 8)
程序存储器类型: 闪存
RAM 容量: 32K x 8
电压 - 电源 (Vcc/Vdd): 3 V ~ 3.6 V
数据转换器: A/D 8x12b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 81-LBGA
包装: 托盘
Electrical Characteristics
MCF5213 ColdFire Microcontroller, Rev. 3
Freescale Semiconductor
31
2.5
ESD Protection
2.6
DC Electrical Specifications
Table 25. ESD Protection Characteristics1, 2
1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for
Automotive Grade Integrated Circuits.
2 A device is defined as a failure if after exposure to ESD pulses the device no longer
meets the device specification requirements. Complete DC parametric and functional
testing is performed per applicable device specification at room temperature followed by
hot temperature, unless specified otherwise in the device specification.
Characteristics
Symbol
Value
Units
ESD target for Human Body Model
HBM
2000
V
ESD target for Machine Model
MM
200
V
HBM circuit description
Rseries
1500
Ω
C
100
pF
MM circuit description
Rseries
0
Ω
C
200
pF
Number of pulses per pin (HBM)
Positive pulses
Negative pulses
1
Number of pulses per pin (MM)
Positive pulses
Negative pulses
3
Interval of pulses
1
sec
Table 26. DC Electrical Specifications 1
Characteristic
Symbol
Min
Max
Unit
Supply voltage
VDD
3.0
3.6
V
Standby voltage
VSTBY
3.0
3.6
V
Input high voltage
VIH
0.7
× V
DD
4.0
V
Input low voltage
VIL
VSS – 0.3
0.35
× V
DD
V
Input hysteresis
VHYS
0.06
× V
DD
—mV
Low-voltage detect trip voltage (VDD falling)
VLVD
2.15
2.3
V
Low-voltage detect hysteresis (VDD rising)
VLVDHYS
60
120
mV
Input leakage current
Vin = VDD or VSS, digital pins
Iin
–1.0
1.0
μA
Output high voltage (all input/output and all output pins)
IOH = –2.0 mA
VOH
VDD – 0.5
V
Output low voltage (all input/output and all output pins)
IOL = 2.0mA
VOL
—0.5
V
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