参数资料
型号: MCF52210CVM66J
厂商: Freescale Semiconductor
文件页数: 56/56页
文件大小: 0K
描述: IC MCU RISC 64K FLASH 81MAPBGA
标准包装: 1,200
系列: MCF5221x
核心处理器: Coldfire V2
芯体尺寸: 32-位
速度: 66MHz
连通性: I²C,SPI,UART/USART,USB OTG
外围设备: DMA,LVD,POR,PWM,WDT
输入/输出数: 55
程序存储器容量: 64KB(64K x 8)
程序存储器类型: 闪存
RAM 容量: 16K x 8
电压 - 电源 (Vcc/Vdd): 3 V ~ 3.6 V
数据转换器: A/D 8x12b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 81-LBGA
包装: 托盘
MCF52211 ColdFire Microcontroller, Rev. 2
Family Configurations
Freescale Semiconductor
9
The full debug/trace interface is available only on the 100-pin packages. However, every product features the dedicated debug
serial communication channel (DSI, DSO, DSCLK) and the ALLPST signal.
1.2.4
JTAG
The processor supports circuit board test strategies based on the Test Technology Committee of IEEE and the Joint Test Action
Group (JTAG). The test logic includes a test access port (TAP) consisting of a 16-state controller, an instruction register, and
three test registers (a 1-bit bypass register, a 256-bit boundary-scan register, and a 32-bit ID register). The boundary scan register
links the device’s pins into one shift register. Test logic, implemented using static logic design, is independent of the device
system logic.
The device implementation can:
Perform boundary-scan operations to test circuit board electrical continuity
Sample system pins during operation and transparently shift out the result in the boundary scan register
Bypass the device for a given circuit board test by effectively reducing the boundary-scan register to a single bit
Disable the output drive to pins during circuit-board testing
Drive output pins to stable levels
1.2.5
On-Chip Memories
1.2.5.1
SRAM
The dual-ported SRAM module provides a general-purpose 8- or 16-Kbyte memory block that the ColdFire core can access in
a single cycle. The location of the memory block can be set to any 8- or 16-Kbyte boundary within the 4-Gbyte address space.
This memory is ideal for storing critical code or data structures and for use as the system stack. Because the SRAM module is
physically connected to the processor's high-speed local bus, it can quickly service core-initiated accesses or
memory-referencing commands from the debug module.
The SRAM module is also accessible by the DMA. The dual-ported nature of the SRAM makes it ideal for implementing
applications with double-buffer schemes, where the processor and a DMA device operate in alternate regions of the SRAM to
maximize system performance.
1.2.5.2
Flash Memory
The ColdFire flash module (CFM) is a non-volatile memory (NVM) module that connects to the processor’s high-speed local
bus. The CFM is constructed with up to four banks of 16-Kbyte
16-bit flash memory arrays to generate up to 128 Kbytes of
32-bit flash memory. These electrically erasable and programmable arrays serve as non-volatile program and data memory. The
flash memory is ideal for program and data storage for single-chip applications, allowing for field reprogramming without
requiring an external high voltage source. The CFM interfaces to the ColdFire core through an optimized read-only memory
controller that supports interleaved accesses from the 2-cycle flash memory arrays. A backdoor mapping of the flash memory
is used for all program, erase, and verify operations, as well as providing a read datapath for the DMA. Flash memory may also
be programmed via the EzPort, which is a serial flash memory programming interface that allows the flash memory to be read,
erased and programmed by an external controller in a format compatible with most SPI bus flash memory chips.
1.2.6
Power Management
The device incorporates several low-power modes of operation entered under program control and exited by several external
trigger events. An integrated power-on reset (POR) circuit monitors the input supply and forces an MCU reset as the supply
voltage rises. The low voltage detector (LVD) monitors the supply voltage and is configurable to force a reset or interrupt
condition if it falls below the LVD trip point. The RAM standby switch provides power to RAM when the supply voltage to the
chip falls below the standby battery voltage.
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