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| 型号： | MCH3377-TL-E |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3A MCPH3 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 83 毫欧 @ 1.5A，4.5V |
| 闸电荷(Qg) @ Vgs： | 4.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 375pF @ 10V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-SMD，扁平引线 |
| 供应商设备封装： | 3-MCPH |
| 包装： | 标准包装 |
| 产品目录页面： | 1536 (CN2011-ZH PDF) |
| 其它名称： | 869-1169-6 |
Ordering number : ENA0957B
MCH3377
P-Channel Power MOSFET
–20V, –3A, 83m ? , Single MCPH3
Features
http://onsemi.com
?
Ultrahigh-spees switching.
?
1.8V drive
?
Halogen free compliance
?
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
--20
±10
--3
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm)
--12
1
150
--55 to +150
A
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
Product & Package Information
unit : mm (typ)
7019A-003
? Package
? JEITA, JEDEC
: MCPH3
: SC-70, SOT-323
? Minimum Packing Quantity : 3,000 pcs./reel
2.0
3
0.15
MCH3377-TL-E
MCH3377-TL-H
MCH3377-TL-W
0 to 0.02
Packing Type : TL
Marking
QJ
TL
1
2
0.65
0.3
1 : Gate
2 : Source
3 : Drain
Electrical Connection
3
1
MCPH3
2
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014
32514HK TC-00002897/60612TKIM/N1407TIIM PE No. A0957-1/5
相关PDF资料 |
PDF描述 |
|---|---|
| MCH3377-TL-H | MOSFET P-CH 3A 20V MCPH3 |
| MCH3382-TL-H | MOSFET P-CH 2A 12V MCPH3 |
| MCH3383-TL-H | MOSFET P-CH 12V 3.5A MCH3 |
| MCH3474-TL-H | MOSFET N-CH 4A 30V MCPH3 |
| MCH3475-TL-E | MOSFET N-CH 30V 1.8A MCPH3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH3377-TL-H | 功能描述:MOSFET PCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH3377-TL-W | 制造商:ON Semiconductor 功能描述:PCH 1.8V DRIVE SERIES - Tape and Reel |
| MCH3382 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Low Votage Drive Switching Device Applications |
| MCH3382-TL-H | 功能描述:MOSFET PCH 1.5V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH3383 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Low Voltage Drive Switching Device Applications |
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