- 您现在的位置：买卖IC网 > Datasheet目录476 > MCH3477-TL-H (ON Semiconductor)MOSFET N-CH 4.5A 20V MCPH3 Datasheet资料下载
参数资料
| 型号： | MCH3477-TL-H |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 4.5A 20V MCPH3 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 38 毫欧 @ 2A，4.5V |
| 闸电荷(Qg) @ Vgs： | 5.1nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 410pF @ 10V |
| 功率 - 最大： | 1W |
| 安装类型： | * |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
MCH3477
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
min
Ratings
typ
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
20
1
±10
V
μ A
μ A
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
RDS(on)1
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=4.5V
0.4
2.0
3.4
29
1.3
38
V
S
m Ω
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1A, VGS=2.5V
ID=0.5A, VGS=1.8V
VDS=10V, f=1MHz
See speci ? ed Test Circuit.
VDS=10V, VGS=4.5V, ID=4.5A
IS=4.5A, VGS=0V
43
69
410
84
59
7.5
26
38
32
5.1
0.7
1.7
0.78
61
99
1.2
m Ω
m Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
4.5V
0V
VIN
VDD=10V
PW=10 μ s
D.C. ≤ 1%
VIN
G
D
ID=2A
RL=5 Ω
VOUT
P.G
50 Ω
S
MCH3477
Ordering Information
Device
MCH3477-TL-H
Package
MCPH3
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1260-2/7
相关PDF资料 |
PDF描述 |
|---|---|
| MCH3479-TL-H | MOSFET N-CH 3.5A 20V MCPH3 |
| MCH3481-TL-H | MOSFET N-CH 2A 20V MCPH3 |
| MCH3484-TL-H | MOSFET N-CH 4.5A 20V MCPH3 |
| MCH6321-TL-E | MOSFET P-CH 20V 4A MCPH6 |
| MCH6331-TL-E | MOSFET P-CH 30V 3.5A MCPH6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH3478 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH3478_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH3478-S-TL-H | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH3478-TL-H | 功能描述:MOSFET NCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH3479 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
发布紧急采购，3分钟左右您将得到回复。