参数资料
型号: MCH3477-TL-H
厂商: ON Semiconductor
文件页数: 4/7页
文件大小: 0K
描述: MOSFET N-CH 4.5A 20V MCPH3
标准包装: 3,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 4.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 38 毫欧 @ 2A,4.5V
闸电荷(Qg) @ Vgs: 5.1nC @ 4.5V
输入电容 (Ciss) @ Vds: 410pF @ 10V
功率 - 最大: 1W
安装类型: *
封装/外壳: *
供应商设备封装: *
包装: *
MCH3477
0 μ
1m
ms
DC
e a
0m
tio
n(
Ta
25
° C
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
VDS=10V
ID=4.5A
VGS -- Qg
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
IDP=18A
ID=4.5A
ASO
op 10
r
Operation in this
area is limited by RDS(on).
10
s
=
PW≤10μs
10
s
s
)
0.5
0
3
2
0.01
Ta=25 ° C
Single pulse
When mounted on ceramic substrate (900mm 2 ? 0.8mm)
0
1
2
3
4
5
6
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
1.2
Total Gate Charge, Qg -- nC IT13844
PD -- Ta
When mounted on ceramic substrate
(900mm 2 ? 0.8mm)
Drain-to-Source Voltage, VDS -- V
IT13845
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- ° C
IT13846
No. A1260-4/7
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