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参数资料
| 型号： | MCH5837 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH5, 5 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 65K |
| 代理商： | MCH5837 |
MCH5837
No. A0781-2/6
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
[SBD]
Repetitive Peak Reverse Voltage
VRRM
15
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
15
V
Average Output Current
IO
1A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
3
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=1A
1.4
2.4
S
RDS(on)1
ID=1A, VGS=4V
110
145
mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=0.5A, VGS=2.5V
150
215
mΩ
RDS(on)3
ID=0.1A, VGS=1.8V
210
320
mΩ
Input Capacitance
Ciss
VDS=10V, f=1MHz
115
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
35
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
25
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
7.5
ns
Rise Time
tr
See specified Test Circuit.
27
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
20
ns
Fall Time
tf
See specified Test Circuit.
30
ns
Total Gate Charge
Qg
VDS=10V, VGS=4V, ID=2A
1.8
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4V, ID=2A
0.35
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4V, ID=2A
0.5
nC
Diode Forward Voltage
VSD
IS=2A, VGS=0V
0.86
1.2
V
[SBD]
Reverse Voltage
VR
IR=0.5mA
15
V
Forward Voltage
VF1IF=0.3A
0.3
0.33
V
VF2IF=0.5A
0.33
0.36
V
Reverse Current
IR
VR=6V
90
μA
Interterminal Capacitance
C
VR=10V, f=1MHz
20
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
10
ns
Package Dimensions
Electrical Connection
unit : mm (typ)
7021A-008
54
13
2
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
Top view
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
SANYO : MCPH5
2.0
0.25
1.6
2.1
0.25
0.85
0.3
0.65
0.15
0 to 0.02
0.07
54
12
3
54
12
3
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| MCH5908G-TL-E | 功能描述:MOSFET N-CH 15V 50MA MCPH5 RoHS:是 类别:分离式半导体产品 >> JFET（结点场效应 系列:- 标准包装:8,000 系列:- 电流 - 漏极(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏极至源极电压(Vdss):30V 漏极电流 (Id) - 最大:10mA FET 型:N 沟道 电压 - 击穿 (V(BR)GSS):- 电压 - 切断 (VGS 关）@ Id:180mV @ 1µA 输入电容 (Ciss) @ Vds:4pF @ 10V 电阻 - RDS（开）:200 欧姆 安装类型:表面贴装 包装:带卷 (TR) 封装/外壳:3-XFDFN 供应商设备封装:3-ECSP1006 功率 - 最大:100mW |
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