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参数资料
| 型号： | MCH6412 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 30 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 37K |
| 代理商： | MCH6412 |
MCH6412
No. A0448-1/4
Features
Low ON-resistance.
1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
5A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
20
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm)
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=3A
4.4
7.4
S
RDS(on)1
ID=3A, VGS=4V
31
41
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=1.5A, VGS=2.5V
40
57
m
RDS(on)3
ID=0.3A, VGS=1.8V
55
90
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
790
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
125
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
110
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
16.5
ns
Rise Time
tr
See specified Test Circuit.
78
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
77
ns
Fall Time
tf
See specified Test Circuit.
125
ns
Marking : KL
Continued on next page.
Ordering number : ENA0448
82306 / 62006PE MS IM TB-00002099
MCH6412
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
SANYO Semiconductors
DATA SHEET
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6412-TL-E | 功能描述:MOSFET N-CH 30V 5A MCPH6 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MCH6415-TL-E | 制造商:SANYO 功能描述:Nch 20V 4A lbogU Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 20V 4A SC-82 制造商:Sanyo 功能描述:0 |
| MCH6421 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6421_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6421-TL-E | 功能描述:MOSFET NCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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