参数资料
型号: MCH6620
厂商: SANYO SEMICONDUCTOR CO LTD
元件分类: 小信号晶体管
英文描述: 1400 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: MCPH6, 6 PIN
文件页数: 2/4页
文件大小: 30K
代理商: MCH6620
MCH6620
No.7184-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=10V, f=1MHz
65
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
14
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
8
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
5
ns
Rise Time
tr
See specified Test Circuit.
4
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
11
ns
Fall Time
tf
See specified Test Circuit.
3
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=1.4A
2.5
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=1.4A
0.6
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=1.4A
0.3
nC
Diode Forward Voltage
VSD
IS=1.4A, VGS=0
0.87
1.2
V
Electrical Connection
Switching Time Test Circuit
PW=10
s
D.C.
≤1%
P.G
50
G
S
D
ID=700mA
RL=21.4
VDD=15V
VOUT
MCH6620
VIN
10V
0V
VIN
0.2
0.4
0.6
0.8
1.0
1.2
1.4
--60
--40
--20
0
20
40
60
80
100
120
140
160
234
678
59
10
IT03296
0
0.5
1.0
2.0
0.2
1.5
0
100
200
300
400
500
600
700
800
0
0.4
0.6
0.8
1.0
4V
5V
IT03294
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IT03295
IT03297
100
200
300
400
500
600
700
800
0
ID=0.7A,
VGS
=10V
ID=0.4A,
VGS
=4V
VGS=3V
6V
8V
10V
VDS=10V
ID=0.4A
0.7A
Ta=25
°C
RDS(on) -- VGS
ID -- VDS
ID -- VGS
RDS(on) -- Ta
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
--
A
Gate-to-Source Voltage, VGS -- V
Drain
Current,
I
D
--
A
Ambient Temperature, Ta --
°C
--25
°C
T
a=75
°C
T
a=
-
-25
°C
25
°C
75
°C
25
°C
654
12
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
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