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参数资料
| 型号： | MCH6660-TL-H |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 10V 2/1.5A MCPH6 |
| 标准包装： | 3,000 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A，1.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 136 毫欧 @ 1A，4.5V |
| 闸电荷(Qg) @ Vgs： | 1.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 128pF @ 10V |
| 功率 - 最大： | 800mW |
| 安装类型： | * |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
Ordering number : ENA1993A
MCH6660
Power MOSFET
20V, 2A, 136m Ω , –20V, –1.5A, 266m Ω , Complementary Dual MCPH6
Features
http://onsemi.com
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ON-resistance Nch : RDS(on)1=105m Ω (typ.)
Pch : RDS(on)1=205m Ω (typ.)
1.8V drive
Halogen free compliance
Protection diode in
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Symbol
VDSS
VGSS
ID
IDP
PD
Conditions
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm) 1unit
N-channel
20
±10
2
8
0.8
P-channel
--20
±10
--1.5
--6
Unit
V
V
A
A
W
Channel Temperature
Storage Temperature
Tch
Tstg
150
--55 to +150
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7022A-006
Product & Package Information
? Package : MCPH6
? JEITA, JEDEC : SC-88, SC-70-6, SOT-363
? Minimum Packing Quantity : 3,000 pcs./reel
6
2.0
5
4
0.15
MCH6660-TL-H
Packing Type : TL
Marking
0 to 0.02
XM
1
0.65
2
3
0.3
TL
Electrical Connection
1 : Source1
2 : Gate1
6
5
4
1
2
3
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
6
5
4
MCPH6
1
2
3
Semiconductor Components Industries, LLC, 2013
July, 2013
70412 TKIM/N0911PE TKIM TC-00002657 No. A1993-1/9
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相关代理商/技术参数 |
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| MCH6662 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6662-TL-H | 功能描述:MOSFET NCH+NCH 1.8 DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| MCH6663_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6663-TL-H | 功能描述:MOSFET PCH+NCH 4V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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