参数资料
型号: MCH6663-TL-H
厂商: ON Semiconductor
文件页数: 1/8页
文件大小: 0K
描述: MOSFET N/P-CH 30V 1.8/1.5A MCPH6
标准包装: 3,000
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 1.8A,1.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 188 毫欧 @ 900mA,10V
闸电荷(Qg) @ Vgs: 2nC @ 10V
输入电容 (Ciss) @ Vds: 88pF @ 10V
功率 - 最大: 800mW
安装类型: *
封装/外壳: *
供应商设备封装: *
包装: *
Ordering number : EN8758B
MCH6663
Power MOSFET
30V, 1.8A, 188m Ω , –30V, –1.5A, 325m Ω , Complementary Dual MCPH6
Features
http://onsemi.com
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ON-resistance Nch : RDS(on)1=145m Ω (typ.)
Pch : RDS(on)1=250m Ω (typ.)
4V drive
Halogen free compliance
Nch+Pch MOSFET
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Symbol
VDSS
VGSS
ID
IDP
PD
Conditions
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm) 1unit
N-channel
30
±20
1.8
7.2
0.8
P-channel
--30
±20
--1.5
--6
Unit
V
V
A
A
W
Channel Temperature
Storage Temperature
Tch
Tstg
150
--55 to +150
°C
°C
This product is designed to “ESD immunity < 200V * ”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7022A-006
Product & Package Information
? Package : MCPH6
? JEITA, JEDEC : SC-88, SC-70-6, SOT-363
? Minimum Packing Quantity : 3,000 pcs./reel
6
2.0
5
4
0.15
MCH6663-TL-H
Packing Type : TL
Marking
0 to 0.02
XQ
1
0.65
2
3
0.3
TL
Electrical Connection
1 : Source1
2 : Gate1
6
5
4
1
2
3
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
6
5
4
MCPH6
1
2
3
Semiconductor Components Industries, LLC, 2013
August, 2013
82113 TKIM TC-00002989/62712 TKIM/D0711PE TKIM TC-00002677 No.8758-1/8
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