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参数资料
| 型号： | MD7IC18120NR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/18页 |
| 文件大小： | 0K |
| 描述： | IC PWR AMP RF LDMOS TO270-16 |
| 标准包装： | 500 |
| 频率： | 1.805GHz ~ 1.88GHz |
| P1dB： | 50.8dBm（120W） |
| 增益： | 25.8dB |
| RF 型： | W-CDMA |
| 电源电压： | 28V |
| 测试频率： | 1.88GHz |
| 封装/外壳： | TO-270-16 变式， 扁平引线 |
| 包装： | 带卷 (TR) |
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MD7IC18120N/GN wideband integrated circuit is designed with on--chip
matching that makes it usable from 1805 to 1880 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
? Typical Doherty Single--Carrier W--CDMA Performance: V DD = 28 Volts,
I DQ1A = 70 mA, I DQ1B = 160 mA, I DQ2B = 500 mA, V GS2A = 1.7 Vdc, P out =
30 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz,
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Document Number: MD7IC18120N
Rev. 0, 5/2010
MD7IC18120NR1
MD7IC18120GNR1
1805--1880 MHz, 30 W AVG., 28 V
SINGLE W--CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
Frequency
1805 MHz
1840 MHz
1880 MHz
G ps
(dB)
25.7
25.7
25.8
PAE
(%)
36.7
36.3
35.3
Output PAR
(dB)
6.9
6.9
6.7
CASE 1866--02
TO--270 WBL--16
PLASTIC
MD7IC18120NR1
? Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 140 Watts CW
Output Power
? Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 100 Watts CW P out
? Typical P out @ 1 dB Compression Point ? 120 Watts CW
Features
? Production Tested in a Symmetrical Doherty Configuration
? 100% PAR Tested for Guaranteed Output Power Capability
? Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
? On--Chip Matching (50 Ohm Input, DC Blocked)
? Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
? Integrated ESD Protection
? Greater Negative Gate--Source Voltage Range for Improved Class C Operation
? 225 ° C Capable Plastic Package
? RoHS Compliant
? In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
CASE 1867--02
TO--270 WBL--16 GULL
PLASTIC
MD7IC18120GNR1
V DS1A
V GS2A
V GS1A
RF inA
RF inB
Quiescent Current
Temperature Compensation (1)
PEAKING (2)
RF outA /V DS2A
RF outB /V DS2B
CARRIER (2)
N.C.
V DS1A
V GS2A
V GS1A
N.C.
RF inA
N.C.
N.C.
RF inB
N.C.
V GS1B
V GS2B
V DS1B
N.C.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
16
15
RF outA /V DS2A
RF outB /V DS2B
V GS1B
V GS2B
V DS1B
Quiescent Current
Temperature Compensation (1)
Figure 1. Functional Block Diagram
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family . Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
2. Peaking and Carrier orientation is determined by the test fixture design.
? Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MD7IC18120NR1 MD7IC18120GNR1
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MD7IC2012GNR1 | 功能描述:射频MOSFET电源晶体管 HV7IC 2GHZ12W TO270WB14G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MD7IC2012NR1 | 功能描述:射频MOSFET电源晶体管 HV7IC 2GHZ 12W TO270WB14 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MD7IC2050GNR1 | 功能描述:功率放大器 HV7IC 2100MHZ TO270WB14G RoHS:否 制造商:TriQuint Semiconductor 封装 / 箱体: 工作电源电压:28 V 电源电流:2.5 A 工作温度范围: 封装: |
| MD7IC2050NBR1 | 功能描述:功率放大器 HV7IC 2100MHZ TO272WB14 RoHS:否 制造商:TriQuint Semiconductor 封装 / 箱体: 工作电源电压:28 V 电源电流:2.5 A 工作温度范围: 封装: |
| MD7IC2050NR1 | 功能描述:功率放大器 HV7IC 2100MHZ TO270WB14 RoHS:否 制造商:TriQuint Semiconductor 封装 / 箱体: 工作电源电压:28 V 电源电流:2.5 A 工作温度范围: 封装: |
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