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| 型号： | MCP1316T-29LE/OT |
| 厂商： | Microchip Technology |
| 文件页数： | 36/52页 |
| 文件大小： | 0K |
| 描述： | IC SUPERVISOR 2.90V P-P SOT23-5 |
| 标准包装： | 1 |
| 类型： | 简单复位/加电复位 |
| 监视电压数目： | 1 |
| 输出： | 推挽式，图腾柱 |
| 复位： | 低有效 |
| 复位超时： | 最小为 140 ms |
| 电压 - 阀值： | 2.9V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74A，SOT-753 |
| 供应商设备封装： | SOT-23-5 |
| 包装： | 标准包装 |
| 产品目录页面： | 662 (CN2011-ZH PDF) |
| 其它名称： | MCP1316T-29LE/OTDKR |
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MCP131X/2X
5.4
Modifying The Trip Point, V TRIP
5.5
MOSFET Low-Drive Protection
Although the MCP131X/2X device has a fixed voltage
trip point (V TRIP ), it is sometimes necessary to make
custom adjustments. This can be accomplished by
connecting an external resistor divider to the
MCP131X/2X V DD pin. This causes the V SOURCE
voltage to be at a higher voltage than when the
Low operating power and small physical size make the
MCP131X/2X series ideal for many voltage detector
applications. Figure 5-6 shows a low-voltage gate drive
protection circuit that prevents overheating of the logic-
level MOSFET due to insufficient gate voltage. When
the input signal is below the threshold of the
MCP131X/2X input equals its V TRIP
voltage
MCP131X/2X, its output grounds the gate of the
MOSFET.
To maintain detector accuracy, the bleeder current
through the divider should be significantly higher than
the 10 μA maximum operating current required by the
MCP131X/2X. A reasonable value for this bleeder
V TRIP
270 Ω
V DD
current is 1 mA (100 times the 10 μA required by the
MCP131X/2X). For example, if V TRIP = 2V and the
desired trip point is 2.5V, the value of R 1 + R 2 is 2.5 k Ω
V DD
R L
(2.5V/1 mA). The value of R 1 + R 2 can be rounded to
the nearest standard value and plugged into the
MCP131X/2X
RST
MTP3055EL
equation of Figure 5-5 to calculate values for R 1 and
R 2 . 1% tolerance resistors are recommended.
V SS
V SOURCE
R 2
FIGURE 5-6:
Protection.
MOSFET Low-Drive
R 1
V DD
MCP131X/2X RST
or RST
V SS
5.6 Low-Power Applications
In some low-power applications, the longer that the
microcontroller (such as a PIC ? MCU) can be in the
“Sleep mode”, the lower the average system current
consumption will be.
The WDT feature can be used to “wake-up” the PIC MCU
at a regular interval to service the required tasks before
× --------------------
1
1
2
V
SOURCE
R
R + R
= V TRIP
returning to sleep. This “wake-up” occurs after the PIC
MCU detects a MCLR reset during Sleep mode (for mid-
range family; POR = ‘ 1 ’, BOR = ‘ 1 ’, TO = ‘ 1 ’, and PD = ‘ 1 ’).
Where:
V SOURCE = Voltage to be monitored
V TRIP = Threshold Voltage setting
Note:
In this example, V SOURCE must be
greater than (V TRIP )
FIGURE 5-5:
Modify Trip-Point using
External Resistor Divider.
DS21985C-page 36
? 2005-2012 Microchip Technology Inc.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCP1316T-29NE/OT | 功能描述:监控电路 ACTIVE LOW P-P WDI RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MCP1316T-46BE/OT | 功能描述:监控电路 ACTIVE LOW P-P WDI RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MCP1316T-46FE/OT | 功能描述:监控电路 ACTIVE LOW P-P WDI RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MCP1316T-46KE/OT | 制造商:Microchip Technology Inc 功能描述: |
| MCP1316T-46LE/OT | 功能描述:监控电路 Active low P-P RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
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