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| 型号： | MCP1602-120I/MF |
| 厂商： | Microchip Technology |
| 文件页数： | 4/26页 |
| 文件大小： | 0K |
| 描述： | IC REG BUCK SYNC 1.2V 0.5A 8DFN |
| 标准包装： | 120 |
| 类型： | 降压（降压） |
| 输出类型： | 固定 |
| 输出数： | 1 |
| 输出电压： | 1.2V |
| 输入电压： | 2.7 V ~ 5.5 V |
| 频率 - 开关： | 2MHz |
| 电流 - 输出： | 500mA |
| 同步整流器： | 是 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 包装： | 管件 |
| 供应商设备封装： | 8-DFN-EP（3x3） |
| 产品目录页面： | 668 (CN2011-ZH PDF) |
MCP1602
1.0
ELECTRICAL
CHARACTERISTICS
? Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
Absolute Maximum Ratings ?
V IN - A GND ......................................................................+6.0V
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
All Other I/O .............................. (A GND - 0.3V) to (V IN + 0.3V)
LX to P GND ............................................. -0.3V to (V IN + 0.3V)
Output Short Circuit Current..................................Continuous
Power Dissipation (Note 6) ..........................Internally Limited
Storage Temperature.................................... -65 o C to +150 o C
Ambient Temp. with Power Applied................ -40 o C to +85 o C
Operating Junction Temperature.................. -40 o C to +125 o C
ESD Protection On All Pins:
HBM..............................................................................3 kV
MM...............................................................................200V
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, V IN = 3.6V, C OUT = C IN = 4.7 μF, L = 4.7 μH,
V OUT (ADJ) = 1.8V, I OUT = 100 mA, T A = +25°C. Boldface specifications apply for the T A range of -40 o C to +85 o C .
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Characteristics
Input Voltage
Maximum Output Current
Shutdown Current
Quiescent Current
V IN
I OUT
I IN_SHDN
I Q
2.7
500
—
—
—
—
0.05
45
5.5
—
1
60
V
mA
μA
μA
SHDN = GND
SHDN = V IN , I OUT = 0 mA
Shutdown/UVLO/Thermal Shutdown Characteristics
SHDN, Logic Input Voltage Low
SHDN, Logic Input Voltage High
SHDN, Input Leakage Current
Undervoltage Lockout
Undervoltage Lockout Hystere-
V IL
V IH
V L_SHND
UVLO
UVLO HYS
—
45
-1.0
2.40
—
—
—
±0.1
2.55
200
15
—
1.0
2.70
—
%V IN
%V IN
μA
V
mV
V IN = 2.7V to 5.5V
V IN = 2.7V to 5.5V
V IN = 2.7V to 5.5V, SHDN = A GND
V IN Falling
sis
Thermal Shutdown
Thermal Shutdown Hysteresis
T SHD
T SHD-HYS
—
—
150
10
—
—
°C
°C
Output Characteristics
Adjustable Output Voltage
V OUT
0.8
—
4.5
V
Range
Reference Feedback Voltage
Feedback Input Bias Current
V FB
I VFB
—
—
0.8
-1.5
—
—
V
nA
Note 1:
2:
3:
4:
5:
6:
7:
The minimum V IN has to meet two conditions: V IN ≥ 2.7V and V IN ≥ V OUT + 0.5V.
Reference Feedback Voltage Tolerance applies to adjustable output voltage setting.
V R is the output voltage setting.
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load
regulation is tested over a load range of 0.1 mA to the maximum specified output current. Changes in
output voltage due to heating effects are covered by the thermal regulation specification.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
temperature and the thermal resistance from junction to air (i.e. T A , T J , θ JA ). Exceeding the maximum
allowable power dissipation causes the device to initiate thermal shutdown.
The internal MOSFET switches have an integral diode from the L X pin to the V IN pin, and from the L X pin
to the GND pin. In cases where these diodes are forward-biased, the package power dissipation limits
must be adhered too. Thermal protection is not able to limit the junction temperature for these cases.
The current limit threshold is a cycle-by-cycle current limit.
DS22061A-page 4
? 2007 Microchip Technology Inc.
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