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| 型号： | MCP1754ST-1802E/CB |
| 厂商： | Microchip Technology |
| 文件页数： | 7/42页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 1.8V .15A SOT-23A-3 |
| 标准包装： | 1 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 1.8V |
| 输入电压： | 3.6 V ~ 16 V |
| 电压 - 压降（标准）： | 0.3V @ 150mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 150mA（最小） |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23A-3 |
| 包装： | 标准包装 |
| 其它名称： | MCP1754ST-1802E/CBDKR |
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MCP1754/MCP1754S
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for V IN = V R + 1V, Note 1 , I LOAD = 1 mA, C OUT =
1 μF (X7R), C IN = 1 μF (X7R), T A = 25°C, t r(VIN) = 0.5V/μs, SHDN = V IN , PWRGD = 10K to V OUT .
Boldface type applies for junction temperatures, T J ( Note 7 ) of -40°C to +125°C.
Parameters
PWRGD Time Delay
Detect Threshold to
Sym
T PG
T VDET_PWRGD
Min
—
—
Typ
100
200
Max
—
—
Units
μs
μs
Conditions
Rising Edge of V OUT ,
R PULLUP = 10 k Ω
Falling Edge of V OUT after
PWRGD Active Time
Delay
Transition from
V OUT = V PRWRGD_TH + 50 mV,
to V PWRGD_TH - 50 mV,
R PULLUP = 10k Ω to V IN
AC Performance
Output Delay From V IN To
T DELAY
—
240
—
μs
V IN = 0V to 16V, V OUT = 90%
V OUT = 90% V REG
V R ,
t r (VIN) = 5V/μs,
C OUT = 1 μF, SHDN = V IN
Output Delay From V IN To
T DELAY_START
—
80
—
μs
V IN = 0V to 16V, V OUT ≥ 0.1V,
V OUT > 0.1V
t r (VIN) = 5V/μs,
C OUT = 1 μF, SHDN = V IN
Output Delay From SHDN
T DELAY_SHDN
—
160
—
μs
V IN = 16V, V OUT = 90% V R ,
C OUT = 1 μF, SHDN = GND to
V IN
Output Noise
e N
—
3
—
μV/(Hz) 1/2 I L = 50 mA, f = 1 kHz,
C OUT = 1 μF
Power Supply Ripple
PSRR
—
72
—
dB
V R = 5V, f = 1 kHz, I L =
Rejection Ratio
150 mA,
V INAC = 1V pk-pk, C IN = 0 μF,
V IN = V R + 1.5V
Thermal Shutdown
T SD
—
150
—
°C
Temperature
Thermal Shutdown
Δ TSD
—
10
—
°C
Hysteresis
Note 1:
2:
3:
4:
5:
6:
7:
The minimum V IN must meet two conditions: V IN ≥ 3.6V and V IN ≥ V R + V DROPOUT(MAX) .
V R is the nominal regulator output voltage when the input voltage V IN = V Rated + V DROPOUT(MAX) or Vi IN = 3.6V (which-
ever is greater); I OUT = 1 mA.
TCV OUT = (V OUT-HIGH - V OUT-LOW ) *10 6 / (V R * Δ Temperature), V OUT-HIGH = highest voltage measured over the
temperature range. V OUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV OUT .
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal V R
measured value. The nominal VR measured value is obtained with
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T A , T J , θ JA ). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
? 2011 Microchip Technology Inc.
DS22276A-page 7
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