参数资料
型号: MCP201T-I/SN
厂商: Microchip Technology
文件页数: 8/40页
文件大小: 0K
描述: IC LIN TXRX ON-BOARD VREG 8SOIC
产品培训模块: Microchip MCP20xx LIN Transceiver Overview
标准包装: 3,300
类型: 线路收发器
驱动器/接收器数: 1/1
规程: LIN
电源电压: 6 V ~ 18 V
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
MCP201
DS21730F-page 16
2007 Microchip Technology Inc.
2.3
AC Specifications
TABLE 2-1:
MCP201 THERMAL SPECIFICATIONS
AC Specifications
Electrical Characteristics:
Unless otherwise indicated, all limits are specified for:
VBAT = 6.0V to 18.0V
TAMB = -40°C to +125°C
Symbol
Parameter
Min
Typical
Max
Units
Conditions
Bus Interface
|dV/dt|
Slope Rising and Falling Edges
1.0
2.0
3.0
V/s
(40% to 60%), No Load
|dV/dt|
Slope Rising and Falling edges
ALTERNATE
2.0
4.0
6.0
V/s(Note 1), No Load
tTRANSPD
Propagation Delay of Transmitter
6.0
stRECPD = max
tRECPD
Propagation Delay of Receiver
6.0
s(tRECPDR or tRECPDF)
tRECSYM
Symmetry of Propagation Delay of
Receiver Rising Edge with Respect
to Falling Edge
-2.0
2.0
stRECSYM = max
tTRANSSYM
Symmetry of Propagation Delay of
Transmitter Rising Edge with
Respect to Falling Edge
-2.0
2.0
stTRANSSYM = max
(tTRANSPDF - tRANSPDR)
Voltage Regulator
tBACTVE
Bus Activity to Voltage Regulator
Enabled
10
40
s
Bus debounce time
tVEVR
Voltage Regulator Enabled to
Ready
—50
200
s
t
VREGPOR
Voltage Regulator Enabled to
Ready after POR
——
2.5
ms
(Note 2) CLOAD = 25 nF
tCSOR
Chip Select to Operation Ready
0
50
200
s
tCSPD
Chip Select to Power-down
0
40
s
(Note 2) No CLOAD
tSHUTDOWN Short-Circuit to Shutdown
450
s
Characterized but not
tested
tSCREC
Short-Circuit Recovery Time
2.0
ms
Characterized but not
tested (Note 3)
Note 1:
The mode does not conform to LIN Bus specification version 1.3.
2:
Time depends on external capacitance and load.
3:
Internal current limited. 2.0 ms typical recovery time (RLBUS = 0
Ω, TX = 0.4 VREG, VLBUS = VBAT, TAMB =
25C. Recovery time highly dependent on ambient temperature, package, and thermal resistance).
Sym
Parameter
Min
Typical
Max
Units
Test Conditions
θRECOVERY Recovery Temperature
(junction temperature)
—+135
°C
Characterized but not
tested
θSHUTDOWN Shutdown Temperature
(junction temperature)
—+155
°C
Characterized but not
tested
tTHERM
Thermal Recovery Time
(after Fault condition removed)
2.0
ms
Characterized but not
tested (Note 1)
Note 1:
Internal current limited. 2.0 ms typical recovery time (RLBUS = 0
Ω, TX = 0.4 VREG, VLBUS = VBAT, TAMB =
25C. Recovery time highly dependent on ambient temperature, package, and thermal resistance).
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