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参数资料
型号： MCP40D19T-503E/LT
厂商： Microchip Technology
文件页数： 41/43页
文件大小： 0K
描述： IC DGTL POT 50K 128TAPS SC70-5
标准包装： 1
接片： 128
电阻（欧姆）： 50k
电路数： 1
温度系数： 标准值 150 ppm/°C
存储器类型： 易失
接口： I²C
电源电压： 1.8 V ~ 5.5 V
工作温度： -40°C ~ 125°C
安装类型： 表面贴装
封装/外壳： 6-TSSOP（5 引线），SC-88A，SOT-353
供应商设备封装： SC-70-5
包装： 标准包装
产品目录页面： 674 (CN2011-ZH PDF)
其它名称： MCP40D19T-503E/LTDKR
2009 Microchip Technology Inc.
DS22152B-page 7
MCP40D17/18/19
Rheostat Integral
Non-linearity
MCP40D18
(Note 3)
MCP40D17 and
MCP40D19
devices only
(Note 3)
R-INL
-2.0
±0.5
+2.0
LSb
5 k
Ω
5.5V, IW = 900 A
-5.0
+3.5
+5.0
LSb
2.7V, IW = 430 A (Note 6)
See Section 2.0
LSb
1.8V (Note 6)
-2.0
±0.5
+2.0
LSb
10 k
Ω
5.5V, IW = 450 A
-4.0
+2.5
+4.0
LSb
2.7V, IW = 215 A (Note 6)
See Section 2.0
LSb
1.8V (Note 6)
-1.125
±0.5
+1.125
LSb
50 k
Ω
5.5V, IW = 90 A
-1.5
+1
+1.5
LSb
2.7V, IW = 43 A (Note 6)
See Section 2.0
LSb
1.8V (Note 6)
-0.8
±0.5
+0.8
LSb
100 k
Ω 5.5V, I
W = 45 A
-1.125
+0.25
+1.125
LSb
2.7V, IW = 21.5 A (Note 6)
See Section 2.0
LSb
1.8V (Note 6)
Rheostat
Differential
Non-linearity
MCP40D18
(Note 3)
MCP40D17 and
MCP40D19
devices only
(Note 3)
R-DNL
-0.5
±0.25
+0.5
LSb
5 k
Ω
5.5V, IW = 900 mA
-0.75
+0.5
+0.75
LSb
2.7V, IW = 430 A (Note 6)
See Section 2.0
LSb
1.8V (Note 6)
-0.5
±0.25
+0.5
LSb
10 k
Ω
5.5V, IW = 450 A
-0.75
+0.5
+0.75
LSb
2.7V, IW = 215 A (Note 6)
See Section 2.0
LSb
1.8V (Note 6)
-0.375
±0.25
+0.375
LSb
50 k
Ω
5.5V, IW = 90 A
-0.375
±0.25
+0.375
LSb
2.7V, IW = 43 A (Note 6)
See Section 2.0
LSb
1.8V (Note 6)
-0.375
±0.25
+0.375
LSb
100 k
Ω 5.5V, I
W = 45 A
-0.375
±0.25
+0.375
LSb
2.7V, IW = 21.5 A (Note 6)
See Section 2.0
LSb
1.8V (Note 6)
Capacitance (PA)CAW
—
75
—
pF
f =1 MHz, Code = Full Scale
Capacitance (Pw)CW
—
120
—
pF
f =1 MHz, Code = Full Scale
Capacitance (PB)CBW
—
75
—
pF
f =1 MHz, Code = Full Scale
AC/DC CHARACTERISTICS (CONTINUED)
DC Characteristics
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
–40°C
≤ T
A ≤ +125°C (extended)
All parameters apply across the specified operating ranges unless noted.
VDD = +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
Typical specifications represent values for VDD = 5.5V, TA = +25°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Note 1:
Resistance is defined as the resistance between terminal A to terminal B.
2:
INL and DNL are measured at VW with VA = VDD and VB = VSS.
3:
MCP40D18 device only, includes VWZSE and VWFSE.
4:
Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
5:
This specification by design.
6:
Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and
temperature.
7:
POR/BOR is not rate dependent.
8:
Supply current is independent of current through the resistor network
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